产品分类：晶体管,规格：功耗 Pd 5W,
MULTICOMP
单晶体管 双极, NPN, 250 V, 15 MHz, 5 W, 1 A, 40 hFE
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -10.8 A, -40 V, 0.011 ohm, -10 V, -1.6 V
VISHAY
双路场效应管, MOSFET, 双P沟道, -8 A, -30 V, 24 mohm, -10 V, -3 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 14 A, 30 V, 11.5 mohm, 10 V, 1.8 V
(EN)
VISHAY
晶体管, N沟道
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -40V, 0.011Ω, -10.8A, SOIC-8
(EN)
VISHAY
晶体管, MOSFET, P沟道, -5.3 A, -60 V, 0.079 ohm, -10 V, -2 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 12 A, 30 V, 0.017 ohm, 10 V, 2.8 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 7.6 A, 500 V, 0.72 ohm, 13 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 5 A, 600 V, 1.35 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 3.7 A, 600 V, 1.89 ohm, 10 V, 3 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 7.4 A, 700 V, 0.9 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 5.4 A, 700 V, 1.35 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 6.8 A, 600 V, 0.9 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 5.2 A, 650 V, 1.35 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 2.6 A, 600 V, 3.06 ohm, 10 V, 3 V
(EN)
MULTICOMP
单晶体管 双极, PNP, -175 V, 200 MHz, 5 W, 1 A, 50 hFE
(EN)
SOLID STATE
射频硅晶体管, NPN, TO-39
(EN)SOLID STATE
晶体管 双极-射频, NPN, 30 V, 800 MHz, 5 W, 400 mA, 10 hFE
(EN)SOLID STATE
单晶体管 双极, NPN, 150 V, 150 MHz, 5 W, 300 mA, 40 hFE
(EN)
SOLID STATE
双极性晶体管, NPN, 150V, TO-39
(EN)
NTE ELECTRONICS
晶体管, PNP, 60V, 30A, TO-3
(EN)STMICROELECTRONICS
单晶体管 双极, NPN, 80 V, 100 MHz, 5 W, 1 A, 100 hFE
(EN)
NTE ELECTRONICS
晶体管, NPN, 55V, 400mA, TO-39
(EN)VISHAY
双路场效应管, MOSFET, 双P沟道, -8 A, -30 V, 24 mohm, -10 V, -3 V
(EN)
