产品分类：晶体管,品牌：STMICROELECTRONICS,规格：晶体管封装类型 TO-220,
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 5.2 A, 800 V, 1.8 ohm, 10 V, 3.75 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 4 A, 600 V, 2 ohm, 10 V, 3.75 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 20 A, 600 V, 290 mohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 5 A, 600 V, 0.86 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 4 A, 650 V, 1.2 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 10 A, 600 V, 750 mohm, 10 V, 3.75 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 6 A, 600 V, 1.2 ohm, 10 V, 3.75 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 2.5 A, 800 V, 4.5 ohm, 10 V, 3.75 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 6 A, 1.2 kV, 1.95 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 4 A, 1.5 kV, 5 ohm, 30 V, 4 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 4.3 A, 1 kV, 1.85 ohm, 10 V, 3.75 V
(EN)
STMICROELECTRONICS
单晶体管, IGBT, 20 A, 1.55 V, 115 W, 650 V, TO-220, 3 引脚
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 5 A, 650 V, 0.79 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 5 A, 650 V, 0.98 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
场效应管, MOSFET, N沟道, 650V, 11A, TO-220
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 7 A, 650 V, 0.6 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 35 A, 650 V, 0.067 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 1.85 A, 1 kV, 6.25 ohm, 10 V, 3.75 V
(EN)STMICROELECTRONICS
单晶体管, IGBT, 29 A, 1.35 V, 80 W, 600 V, TO-220, 3 引脚
(EN)STMICROELECTRONICS
单晶体管, IGBT, 20 A, 2.5 V, 60 W, 600 V, TO-220, 3 引脚
(EN)STMICROELECTRONICS
单晶体管, IGBT, 25 A, 2.5 V, 80 W, 600 V, TO-220, 3 引脚
(EN)STMICROELECTRONICS
单晶体管, IGBT, 25 A, 2.5 V, 80 W, 600 V, TO-220, 3 引脚
(EN)STMICROELECTRONICS
单晶体管, IGBT, 15 A, 2.5 V, 56 W, 600 V, TO-220, 3 引脚
(EN)STMICROELECTRONICS
单晶体管, IGBT, 60 A, 2.5 V, 200 W, 600 V, TO-220, 3 引脚
(EN)STMICROELECTRONICS
单晶体管, IGBT, 40 A, 2.5 V, 130 W, 600 V, TO-220, 3 引脚
(EN)
