
VISHAY
晶体管, MOSFET, N沟道, 1 A, 100 V, 540 mohm, 10 V, 4 V

VISHAY
晶体管, MOSFET, P沟道, 1.6 A, -60 V, 280 mohm, -10 V, -4 V

VISHAY
晶体管, MOSFET, N沟道, 600 mA, 200 V, 1.5 ohm, 10 V, 4 V

VISHAY
晶体管, MOSFET, N沟道, 2.5 A, 60 V, 100 mohm, 5 V, 2 V

VISHAY
晶体管, MOSFET, N沟道, 1.3 A, 100 V, 270 mohm, 5 V, 2 V

VISHAY
晶体管, MOSFET, N沟道, 1.7 A, 60 V, 200 mohm, 10 V, 4 V

VISHAY
晶体管, MOSFET, N沟道, 1.3 A, 200 V, 800 mohm, 10 V, 4 V

VISHAY
晶体管, MOSFET, N沟道, 1.3 A, 100 V, 270 mohm, 10 V, 4 V

VISHAY
晶体管, MOSFET, N沟道, 1.7 A, 60 V, 200 mohm, 5 V, 2 V

VISHAY
晶体管, MOSFET, N沟道, 2.5 A, 60 V, 100 mohm, 10 V, 4 V

VISHAY
晶体管, MOSFET, P沟道, 700 mA, -100 V, 1.2 ohm, -10 V, -4 V

VISHAY
晶体管, MOSFET, N沟道, 1 A, 100 V, 540 mohm, 5 V, 2 V

VISHAY
晶体管, MOSFET, N沟道, 2.4 A, 50 V, 100 mohm, 10 V, 4 V

VISHAY
晶体管, MOSFET, P沟道, 1 A, -100 V, 600 mohm, -10 V, -4 V

POWEREX
晶体管, IGBT模块, 600V, 50A, DIP

THAT CORPORATION
双极晶体管阵列, NPN, PNP, 40 V, 20 mA, 100 hFE, DIP

STMICROELECTRONICS
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, 1000 hFE, DIP

THAT CORPORATION
双极晶体管阵列, 低噪, PNP, -40 V, -20 mA, 75 hFE, DIP

VISHAY
场效应管, MOSFET, N沟道, HEXDIP

ANALOG DEVICES
双极晶体管阵列, 双PNP, 36 V, 20 mA, 165 hFE, DIP

TEXAS INSTRUMENTS
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, DIP

TEXAS INSTRUMENTS
芯片, 达林顿晶体管阵列, 500mA x8