产品分类：晶体管,规格：晶体管封装类型 TO-252AA,
INFINEON
晶体管, MOSFET, N沟道, 93 A, 20 V, 0.0045 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 42 A, 40 V, 0.0039 ohm, 10 V, 2.5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 8.7 A, 100 V, 0.15 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -20 A, -55 V, 0.093 ohm, -10 V, -1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管, IGBT, 5.3 A, 2.5 V, 60 W, 1.2 kV, TO-252AA, 3 引脚
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 1 A, 800 V, 15.5 ohm, 10 V, 5 V
(EN)
MICROCHIP
功率场效应管, MOSFET, N沟道, 300 mA, 650 V, 8 ohm, 0 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 2.8 A, 600 V, 2 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 800V, 1mA
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 1.9 A, 600 V, 3.6 ohm, 10 V, 4 V
(EN)INFINEON
单晶体管, IGBT, 16 A, 1.7 V, 77 W, 600 V, TO-252AA, 3 引脚
(EN)
ON SEMICONDUCTOR
Bipolar (BJT) Single Transistor, NPN, 100 V, 25 MHz, 20 W, 2 A, 200 hFE
(EN)INFINEON
单晶体管, IGBT, N通道, 6.3 A, 1.95 V, 35 W, 600 V, TO-252AA, 3 引脚
(EN)
INTERNATIONAL RECTIFIER
晶体管, 单路, IGBT, 600V, 14A
(EN)
MICROCHIP
场效应管, MOSFET, N沟道, 650V, 0.3A, TO-252AA-3
(EN)INFINEON
单晶体管, IGBT, N通道, 12 A, 1.7 V, 77 W, 600 V, TO-252AA, 3 引脚
(EN)
VISHAY
MOSFET, N CHANNEL, 600V, 2A, TO-252-3
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 2 A, 600 V, 4.4 ohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 1 A, 800 V, 15.5 ohm, 10 V, 5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 1.9 A, 600 V, 3.6 ohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 2.8 A, 600 V, 2 ohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
单晶体管, IGBT, 5.3 A, 2.5 V, 60 W, 1.2 kV, TO-252AA, 3 引脚
(EN)INFINEON
单晶体管, IGBT, 14 A, 1.7 V, 38 W, 600 V, TO-252AA, 3 引脚
(EN)ON SEMICONDUCTOR/FAIRCHILD
单晶体管, IGBT, 21 A, 1.9 V, 150 W, 400 V, TO-252AA, 3 引脚
(EN)ON SEMICONDUCTOR/FAIRCHILD
单晶体管, IGBT, 21 A, 1.9 V, 150 W, 400 V, TO-252AA, 3 引脚
(EN)
