
VISHAY
晶体管, MOSFET, N沟道, 50 A, 60 V, 0.0064 ohm, 10 V, 2 V

NEXPERIA
晶体管, MOSFET, N沟道, 120 A, 55 V, 3.3 mohm, 10 V, 2.3 V

INFINEON
晶体管, MOSFET, N沟道, 27 A, 55 V, 45 mohm, 10 V, 2 V

NEXPERIA
晶体管, MOSFET, N沟道, 44 A, 55 V, 16 mohm, 10 V, 2.3 V

INFINEON
场效应管, MOSFET, N沟道, 30V, 8.8A, 6-PQFN

SOLID STATE
单晶体管 双极, NPN, 80 V, 200 W, 20 A, 1000 hFE

INFINEON
晶体管, MOSFET, N沟道, 51 A, 55 V, 0.0111 ohm, 10 V, 2 V

VISHAY
晶体管, MOSFET, N沟道, 12 A, 60 V, 0.017 ohm, 10 V, 2 V

GENESIC SEMICONDUCTOR
单晶体管, IGBT, 硅, 35 A, 1.2 kV, TO-247, 3 引脚

INFINEON
功率场效应管, MOSFET, N沟道, 7.3 A, 600 V, 0.54 ohm, 10 V, 3 V

VISHAY
晶体管, MOSFET, N沟道, 84 A, 30 V, 0.0053 ohm, 10 V, 2 V

VISHAY
场效应管, MOSFET, N沟道, 3.2A, 60V, 2W

SOLID STATE
晶体管, JFET, JFET, -30 V, 20 mA, 100 mA, -6 V, TO-18, JFET

VISHAY
场效应管, MOSFET, N沟道

TAIWAN SEMICONDUCTOR
晶体管, MOSFET, P沟道, -5.3 A, -30 V, 0.038 ohm, -10 V, -1 V

INFINEON
晶体管, MOSFET, N沟道, 195 A, 24 V, 0.0012 ohm, 10 V, 2 V

INFINEON
功率场效应管, MOSFET, N沟道, 30 A, 600 V, 0.11 ohm, 10 V, 3 V

SOLID STATE
晶体管, JFET, JFET, -40 V, 80 mA, 4 V, TO-18, JFET

INFINEON
晶体管, MOSFET, N沟道, 110 A, 55 V, 0.0049 ohm, 10 V, 2 V

INFINEON
晶体管, MOSFET, N沟道, 240 A, 55 V, 0.002 ohm, 10 V, 2 V

INFINEON
晶体管, MOSFET, P沟道, -13 A, -150 V, 0.29 ohm, -10 V, -2 V

INFINEON
双路场效应管, MOSFET, N和P沟道, 4.7 A, 55 V, 0.043 ohm, 10 V, 1 V

INFINEON
晶体管, MOSFET, N沟道, 22 A, 40 V, 0.0025 ohm, 10 V, 3 V

INFINEON
晶体管, MOSFET, N沟道, 73 A, 100 V, 0.011 ohm, 10 V, 2 V

INFINEON
晶体管, MOSFET, N沟道, 59 A, 55 V, 0.0111 ohm, 10 V, 2 V