
DIODES INC.
晶体管, MOSFET, 增强模式, P沟道, -3.6 A, -20 V, 0.023 ohm, -4.5 V, -700 mV

DIODES INC.
晶体管, MOSFET, 增强模式, P沟道, 5.2 A, -12 V, 0.026 ohm, -4.5 V, -0.55 V

DIODES INC.
双极晶体管阵列, 双路, NPN, 160 V, 300 mW, 200 mA, 80 hFE, SOT-26

DIODES INC.
晶体管, MOSFET, 增强模式, P沟道, -4.6 A, -30 V, 0.07 ohm, -10 V, -1 V

DIODES INC.
单晶体管 双极, PNP, -150 V, 300 MHz, 300 mW, -600 mA, 60 hFE

DIODES INC.
单晶体管 双极, NPN, 40 V, 300 mW, 600 mA, 100 hFE

DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 5.6 A, 60 V, 0.068 ohm, 10 V, 1 V

DIODES INC.
单晶体管 双极, NPN, 80 V, 160 MHz, 625 mW, 1.5 A, 300 hFE

DIODES INC.
双路场效应管, MOSFET, N和P沟道, 3.4 A, 30 V, 0.038 ohm, 10 V, 1 V

DIODES INC.
单晶体管 双极, NPN, 160 V, 130 MHz, 1 W, 600 mA, 80 hFE

DIODES INC.
晶体管, MOSFET, 增强模式, P沟道, -5 A, -30 V, 0.045 ohm, -10 V, -1 V

DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 4.2 A, 20 V, 0.019 ohm, 4.5 V, 500 mV

DIODES INC.
双路场效应管, MOSFET, 半桥接, N和P沟道, 3.98 A, 30 V, 0.033 ohm, 10 V, 1 V

DIODES INC.
晶体管, MOSFET, 增强模式, P沟道, -35 mA, -200 V, 80 ohm, -10 V, -1.5 V

DIODES INC.
晶体管, MOSFET, 增强模式, P沟道, -2.6 A, -100 V, 0.15 ohm, -10 V, -2 V

DIODES INC.
双极晶体管阵列, 双路, NPN, 40 V, 200 mW, 200 mA, 100 hFE, SOT-363

DIODES INC.
晶体管, MOSFET, P沟道, -3 A, -60 V, 0.096 ohm, -10 V, -1 V

DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 1 A, 20 V, 0.3 ohm, 4.5 V, 500 mV

DIODES INC.
单晶体管 双极, PNP, -100 V, 200 MHz, 625 mW, -1 A, 300 hFE

DIODES INC.
晶体管, MOSFET, 增强模式, P沟道, -5.4 A, -30 V, 0.045 ohm, -10 V, -1 V

DIODES INC.
单晶体管 双极, PNP, -400 V, 50 MHz, 1 W, -200 mA, 100 hFE

DIODES INC.
晶体管, MOSFET, P沟道, -3.7 A, -60 V, 0.055 ohm, -10 V, -1 V

DIODES INC.
单晶体管 双极, NPN, 400 V, 50 MHz, 1 W, 225 mA, 100 hFE
