
DIODES INC.
单晶体管 双极, PNP, -300 V, 30 MHz, 2 W, -500 mA, 50 hFE

DIODES INC.
单晶体管 双极, NPN, 40 V, 300 mW, 600 mA, 100 hFE

DIODES INC.
单晶体管 双极, PNP, -40 V, 300 mW, -600 mA, 100 hFE

DIODES INC.
单晶体管 双极, PNP, -150 V, 300 MHz, 300 mW, -600 mA, 60 hFE

DIODES INC.
单晶体管 双极, PNP, -80 V, 50 MHz, 300 mW, -500 mA, 100 hFE

DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 60 mA, 200 V, 25 ohm, 10 V, 1 V

DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 800 mA, 100 V, 1.5 ohm, 10 V, 800 mV

DIODES INC.
晶体管, MOSFET, 增强模式, P沟道, -35 mA, -200 V, 80 ohm, -10 V, -1.5 V

DIODES INC.
双路场效应管, MOSFET, 半桥接, N和P沟道, 3.98 A, 30 V, 0.033 ohm, 10 V, 1 V

DIODES INC.
晶体管, MOSFET, 增强模式, P沟道, -2.6 A, -100 V, 0.15 ohm, -10 V, -2 V

DIODES INC.
晶体管, MOSFET, 增强模式, P沟道, -5.4 A, -30 V, 0.045 ohm, -10 V, -1 V

DIODES INC.
晶体管, MOSFET, 增强模式, P沟道, -1.7 A, -60 V, 0.39 ohm, -10 V, -1 V