产品分类：晶体管,搜索词：236,
INFINEON
场效应管, N通道, MOSFET, 30V, 3.4A, 3-SOT-23, 整卷
(EN)
GENESIC SEMICONDUCTOR
碳化硅结晶体管, 1.2KV, 5A, TO-247AB
(EN)
ON SEMICONDUCTOR
双极性晶体管, PNP, -12V, SOT-563, 整卷
(EN)GENESIC SEMICONDUCTOR
碳化硅结晶体管, 1.2KV, 10A, TO-247AB
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 8 A, 60 V, 0.03 ohm, 10 V, 2 V
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 33 A, 600 V, 0.083 ohm, 10 V, 2 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, 7.7 A, -30 V, 0.025 ohm, -10 V, -600 mV
(EN)VISHAY
功率场效应管, MOSFET, N沟道, 29 A, 600 V, 0.104 ohm, 10 V, 2 V
(EN)INFINEON
单晶体管, IGBT, 40 A, 1.6 V, 255 W, 650 V, TO-220, 3 引脚
(EN)INFINEON
单晶体管, IGBT, 8 A, 1.6 V, 31.2 W, 650 V, TO-220, 3 引脚
(EN)INFINEON
单晶体管, IGBT, 40 A, 1.65 V, 255 W, 650 V, TO-220, 3 引脚
(EN)
INFINEON
单晶体管, IGBT, 40 A, 1.65 V, 255 W, 650 V, TO-247, 3 引脚
(EN)INFINEON
单晶体管, IGBT, 50 A, 1.65 V, 305 W, 650 V, TO-247, 3 引脚
(EN)VISHAY
晶体管, MOSFET, P沟道, -2.3 A, -30 V, 0.105 ohm, -4.5 V, -600 mV
(EN)INFINEON
单晶体管, IGBT, 50 A, 1.65 V, 305 W, 650 V, TO-247, 3 引脚
(EN)
VISHAY
晶体管, MOSFET, N沟道, 7.8 A, 20 V, 0.023 ohm, 4.5 V, 600 mV
(EN)
VISHAY
场效应管, MOSFET, P沟道, -20V, -2.4A, SOT-23, 整卷
(EN)
VISHAY
晶体管, JFET, -40V, TO-236, 整卷
(EN)
VISHAY
场效应管, MOSFET, P沟道, -30V, 29A, SOIC, 整卷
(EN)VISHAY
晶体管, MOSFET, P沟道, -35 A, -20 V, 0.0031 ohm, -10 V, -400 mV
(EN)ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, 60V, 180mA, SOT-23, 整卷
(EN)
VISHAY
场效应管, MOSFET, 双P沟道, -20V, 7.4A
(EN)
ON SEMICONDUCTOR
功率晶体管, PNP, -80V, D-PAK, 整卷
(EN)VISHAY
场效应管, MOSFET, N沟道, 100V, 1.5A, SOT-23, 整卷
(EN)VISHAY
场效应管, MOSFET, N沟道, 60V, 240mA TO-236, 整卷
(EN)
