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场效应管, MOSFET晶体管, 整卷

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晶体管, IGBT阵列&模块, 双NPN, 440 A, 1.95 V, 1.8 kW, 1.7 kV, Module

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晶体管, IGBT阵列&模块, N沟道, 1.5 kA, 2.55 V, 17 kW, 3.3 kV, Module

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场效应管, MOSFET, N沟道, 150V, 900MA, TSOP, 整卷

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晶体管, MOSFET, N沟道, 7.3 A, 30 V, 0.03 ohm, 10 V, 1 V

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晶体管, 双路, N通道, 场效应管, MOSFET, 20V, 微型8, 整卷

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场效应管, P通道, MOSFET, -30V, -16A, SOIC, 整卷

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晶体管, MOSFET, N沟道, 21 A, 60 V, 0.0035 ohm, 10 V, 4 V

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场效应管, MOSFET, N沟道, 30V, 5.3A, SOT-23, 整卷

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场效应管, MOSFET, P沟道, -30V, -3.6 A, SOT-23, 整卷

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场效应管, N通道, MOSFET, 20V, 6.5A, MICRO-6, 整卷

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功率场效应管, MOSFET, N沟道, 1.8 A, 650 V, 2.7 ohm, 10 V, 3 V

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N CH POWER MOSFET, HEXFET, 30V, 27A, PQF

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晶体管, MOSFET, N沟道, 74 A, 25 V, 0.0028 ohm, 10 V, 1.6 V

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场效应管, MOSFET, 双N/P沟道 2W, 8-SOIC

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晶体管, MOSFET, N沟道, 18 A, 200 V, 0.15 ohm, 10 V, 4 V

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晶体管, MOSFET, N沟道, 90 A, 100 V, 0.0053 ohm, 10 V, 2.7 V

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场效应管, MOSFET, N沟道 通道, 60V, 195A, TO-262-3

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晶体管, MOSFET, N沟道, 55 A, 80 V, 10.3 mohm, 10 V, 2.8 V

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晶体管, 射频FET, -100 V, -15 A, 128 W, TO-252

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双路场效应管, MOSFET, 双N沟道, 20 A, 60 V, 0.021 ohm, 10 V, 1.7 V

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晶体管, MOSFET, N沟道, 120 A, 40 V, 0.00188 ohm, 10 V, 3 V

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芯片, 低噪放大器, MMIC, 30MA, 4V, TSLP7-1

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场效应管, MOSFET, 双N沟道, 25V, 145A, PQFN-10

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晶体管, MOSFET, N沟道, 17 A, 55 V, 70 mohm, 10 V, 4 V