ROHM

晶体管, MOSFET, AEC-Q101, P沟道, -2 A, -45 V, 0.13 ohm, -10 V, -3 V

TEXAS INSTRUMENTS

双路场效应管, MOSFET, 双P沟道, -1.6 A, -20 V, 0.056 ohm, -4.5 V, -800 mV

VISHAY

晶体管, MOSFET, N沟道, 1.7 A, 60 V, 200 mohm, 10 V, 4 V

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 15 A, 30 V, 0.0054 ohm, 10 V, 1.8 V

INFINEON

晶体管, MOSFET, N沟道, 80 A, 30 V, 0.0017 ohm, 10 V, 1.8 V

INFINEON

晶体管 双极-射频, NPN, 12 V, 7.5 GHz, 700 mW, 150 mA, 70 hFE

DIODES INC.

单晶体管 双极, 通用, PNP, -60 V, 140 MHz, 1 W, -2 A, 200 hFE

VISHAY

场效应管, MOSFET, N沟道

INFINEON

晶体管, MOSFET, N沟道, 100 A, 20 V, 0.00075 ohm, 10 V, 800 mV

ON SEMICONDUCTOR

晶体管, PNP, 45V, SOT-23

VISHAY

场效应管, MOSFET, 双路N沟道, 20V, 5.2A, TSSOP-8

ON SEMICONDUCTOR/FAIRCHILD

场效应管, MOSFET, P沟道, -40V, 8.4mA

INFINEON

晶体管, MOSFET, P沟道, 2.2 A, -150 V, 240 mohm, 10 V, 5 V

MULTICOMP

双极晶体管

INFINEON

晶体管, MOSFET, N沟道, 2 A, 55 V, 0.14 ohm, 10 V, 2 V

VISHAY

晶体管, MOSFET, P沟道, -4.5 A, -20 V, 0.03 ohm, -4.5 V, -1.5 V

INFINEON

双路场效应管, MOSFET, 双N沟道, 10 A, 30 V, 0.0122 ohm, 10 V, 1.8 V

STMICROELECTRONICS

晶体管, MOSFET, N沟道, 26 A, 30 V, 0.0038 ohm, 10 V, 1 V

INFINEON

晶体管, MOSFET, AEC-Q101, N沟道, 18 A, 150 V, 0.047 ohm, 10 V, 4 V

INFINEON

功率场效应管, MOSFET, N沟道, 120 mA, 600 V, 25 ohm, 10 V, -1.4 V

ON SEMICONDUCTOR

双极性晶体管

STMICROELECTRONICS

晶体管, MOSFET, N沟道, 7.5 A, 500 V, 800 mohm, 10 V, 4 V

RENESAS

晶体管, MOSFET, P沟道, -3.3 A, -30 V, 0.054 ohm, -10 V

ON SEMICONDUCTOR

双路场效应管, MOSFET, 双N沟道, 1.8 A, 30 V, 0.145 ohm, 10 V, 2.6 V

NEXPERIA

晶体管, MOSFET, N沟道, 3.2 A, 30 V, 0.044 ohm, 10 V, 1.4 V