INTERNATIONAL RECTIFIER

P CHANNEL POWER MOSFET, HEXFET, -20V, -4.3A, SOT-23

INFINEON

功率场效应管, MOSFET, N沟道, 1.7 A, 600 V, 2.97 ohm, 10 V, 3 V

INTERNATIONAL RECTIFIER

双路场效应管, N 通道, MOSFET, 50V, SOIC

ON SEMICONDUCTOR

单晶体管 双极, NPN, 15 V, 300 mW, 200 mA, 120 hFE

INFINEON

功率场效应管, MOSFET, N沟道, 47 A, 650 V, 70 mohm, 10 V, 3 V

MULTICOMP

单晶体管 双极, PNP, -45 V, 100 MHz, 250 mW, -100 mA, 420 hFE

INFINEON

双路场效应管, MOSFET, 双N沟道, 10 A, 20 V, 0.0107 ohm, 10 V, 2.55 V

VISHAY

N CHANNEL MOSFET, 20V, 22A POWERPAK

VISHAY

晶体管, MOSFET, N沟道, 3.5 A, 150 V, 0.041 ohm, 10 V, 2 V

VISHAY

场效应管, MOSFET, P沟道, -3.2A, -30V, 1.25W

DIODES INC.

单晶体管 双极, NPN, 60 V, 150 MHz, 350 mW, 1 A, 100 hFE

ON SEMICONDUCTOR

单晶体管 双极, 音频, PNP, -150 V, 30 MHz, 50 W, -8 A, 40 hFE

FUJI ELECTRIC

晶体管, IGBT阵列&模块, N沟道, 4 A, SIP

DIODES INC.

晶体管, MOSFET, N沟道, 1.6 A, 60 V, 0.092 ohm, 10 V, 3 V

INFINEON

晶体管, MOSFET, N沟道, 1.6 A, 100 V, 200 mohm, 10 V, 4 V

DIODES INC.

单晶体管 双极, NPN, 40 V, 300 MHz, 200 mW, 200 mA, 100 hFE

NEXPERIA

晶体管, MOSFET, N沟道, 100 A, 60 V, 0.004 ohm, 10 V, 3 V

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 18 A, 30 V, 4.2 mohm, 10 V, 2.5 V

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, P沟道, -10 A, -20 V, 0.0085 ohm, -4.5 V, -600 mV

INFINEON

晶体管, MOSFET, N沟道, 9 A, 550 V, 0.36 ohm, 10 V, 3 V

TOSHIBA

功率场效应管, MOSFET, N沟道, 3.5 A, 600 V, 1.7 ohm, 10 V, 2.4 V

NEXPERIA

晶体管 双极预偏置/数字, BRT, 单路NPN, 50 V, 100 mA, 47 kohm, 47 kohm, 1 电阻比率

NEXPERIA

单晶体管 双极, NPN, 160 V, 250 mW, 300 mA, 80 hFE

INFINEON

晶体管, MOSFET, N沟道, 6.6 A, 500 V, 0.86 ohm, 13 V, 3 V

INFINEON

双路场效应管, MOSFET, 双N沟道, 5.4 A, 20 V, 0.03 ohm, 4.5 V, 1.2 V