DIODES INC.

双路场效应管, MOSFET, N和P沟道, 9 A, 30 V, 0.012 ohm, 10 V, 2 V

INFINEON

晶体管, MOSFET, P沟道, -11 A, -55 V, 175 mohm, -10 V, -4 V

ON SEMICONDUCTOR

单晶体管 双极, NPN, 40 V, 215 MHz, 2 W, 3 A, 100 hFE

ON SEMICONDUCTOR/FAIRCHILD

MOSFET, N CHANNEL, 40V, 0.0033OHM, 18A, SOIC-8

ON SEMICONDUCTOR

晶体管, MOSFET, N沟道, 124 A, 30 V, 0.0034 ohm, 11.5 V, 2.5 V

VISHAY

晶体管, MOSFET, N沟道, 3.1 A, 400 V, 1.8 ohm, 10 V, 4 V

ON SEMICONDUCTOR/FAIRCHILD

单晶体管 双极, NPN, 100 V, 40 W, 4 A, 750 hFE

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 900 mA, 20 V, 220 mohm, 4.5 V, 1 V

DIODES INC.

晶体管, MOSFET, P沟道, 6.4 A, -40 V, 60 mohm, 10 V, -1 V

ON SEMICONDUCTOR/FAIRCHILD

单晶体管 双极, NPN, 160 V, 100 MHz, 900 mW, 1 A, 160 hFE

DIODES INC.

晶体管, MOSFET, N沟道, 70 A, 24 V, 0.0037 ohm, 10 V, 1.45 V

DIODES INC.

晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0024 ohm, 10 V, 3 V

INFINEON

晶体管, MOSFET, N沟道, 42 A, 75 V, 0.0218 ohm, 10 V, 4 V

ON SEMICONDUCTOR

场效应管, MOSFET, P沟道, -30V, 1.95A, SOT-23

INFINEON

晶体管, MOSFET, N沟道, 43 A, 60 V, 12.6 mohm, 10 V, 4 V

DIODES INC.

单晶体管 双极, NPN, 40 V, 150 MHz, 500 mW, 1 A, 300 hFE

ON SEMICONDUCTOR

双路场效应管, MOSFET, 双N沟道, 304 mA, 60 V, 1 ohm, 10 V, 1.7 V

NEXPERIA

双路场效应管, MOSFET, N和P沟道, 350 mA, 30 V, 1 ohm, 4.5 V, 900 mV

NEXPERIA

晶体管, MOSFET, N沟道, 6.8 A, 20 V, 0.016 ohm, 4.5 V, 650 mV

INFINEON

晶体管, MOSFET, N沟道, 56 A, 55 V, 0.0118 ohm, 10 V, 4 V

INFINEON

晶体管, MOSFET, N沟道, 9.4 A, 200 V, 0.38 ohm, 10 V, 5.5 V

VISHAY

功率场效应管, MOSFET, N沟道, 12 A, 600 V, 0.32 ohm, 10 V, 2 V

INFINEON

晶体管, MOSFET, P沟道, -18 A, -55 V, 0.11 ohm, -10 V, -4 V

INFINEON

晶体管, MOSFET, N沟道, 78 A, 30 V, 0.0025 ohm, 10 V, 2.35 V

VISHAY

晶体管, MOSFET, P沟道, -900 mA, -8 V, 0.28 ohm, -4.5 V, -400 mV