VISHAY

功率场效应管, MOSFET, N沟道, 12 A, 600 V, 0.32 ohm, 10 V, 2 V

MULTICOMP

单晶体管 双极, NPN, 65 V, 60 MHz, 800 mW, 1 A, 40 hFE

INFINEON

晶体管, MOSFET, N沟道, 100 A, 20 V, 0.0032 ohm, 4.5 V, 800 mV

NEXPERIA

晶体管, MOSFET, N沟道, 120 A, 100 V, 4850 μohm, 5 V, 1.7 V

ON SEMICONDUCTOR/FAIRCHILD

场效应管, MOSFET, P沟道, -20V, 0.019Ω, -7.8A, MICROFET-6

VISHAY

双路场效应管, MOSFET, N和P沟道, 10 A, 40 V, 0.0145 ohm, 10 V, 800 mV

ON SEMICONDUCTOR/FAIRCHILD

N CHANNEL MOSFET, 40V, 28A, TO-252

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 27 A, 150 V, 0.041 ohm, 10 V, 3.1 V

INFINEON

晶体管, MOSFET, N沟道, 32 A, 100 V, 0.036 ohm, 10 V, 4 V

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 3.9 A, 200 V, 0.059 ohm, 10 V, 2.9 V

ON SEMICONDUCTOR

双极晶体管

ON SEMICONDUCTOR/FAIRCHILD

单晶体管 双极, NPN, 45 V, 300 MHz, 500 mW, 100 mA, 420 hFE

NEXPERIA

单晶体管 双极, NPN, 60 V, 180 MHz, 640 mW, 1 A, 100 hFE

ON SEMICONDUCTOR

单晶体管 双极, NPN, 60 V, 100 MHz, 225 mW, 500 mA, 100 hFE

NEXPERIA

单晶体管 双极, 开关, PNP, -40 V, 250 MHz, 250 mW, -200 mA, 100 hFE

INTERNATIONAL RECTIFIER

晶体管, 单路, IGBT, 600V, 23A

ROHM

晶体管, MOSFET, P沟道, -1.5 A, -100 V, 0.35 ohm, -10 V, -2.5 V

MULTICOMP

单晶体管 双极, 达林顿, PNP, 100 V, 70 W, 10 A, 750 hFE

NEXPERIA

单晶体管 双极, PNP, -60 V, 185 MHz, 250 mW, -1 A, 350 hFE

INFINEON

晶体管, MOSFET, N沟道, 56 A, 75 V, 0.0095 ohm, 10 V, 3.7 V

STMICROELECTRONICS

单晶体管, IGBT, 6 A, 2.5 V, 20 W, 600 V, TO-220FP, 3 引脚

TEXAS INSTRUMENTS

晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0012 ohm, 10 V, 1.4 V

INFINEON

晶体管, MOSFET, N沟道, 65 A, 30 V, 10 mohm, 10 V, 1 V

INFINEON

晶体管, MOSFET, N沟道, 3.1 A, 55 V, 0.065 ohm, 10 V, 1 V

INFINEON

晶体管, MOSFET, N沟道, 3.8 A, 20 V, 0.017 ohm, 4.5 V, 950 mV