VISHAY

双路场效应管, MOSFET, N和P沟道, 5.3 A, 60 V, 0.046 ohm, 10 V, 1 V

NEXPERIA

晶体管, MOSFET, N沟道, 300 mA, 60 V, 2.8 ohm, 10 V, 2 V

MULTICOMP

单晶体管 双极, 通用, NPN, 45 V, 150 MHz, 600 mW, 100 mA, 110 hFE

ROHM

晶体管 双极预偏置/数字, AEC-Q101, 单路PNP, -50 V, -100 mA, 10 kohm, 10 kohm, 1 电阻比率

INFINEON

场效应管, MOSFET, N沟道, 30V, 8.7A, 6-PQFN

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 14 A, 50 V, 100 mohm, 5 V, 2 V

ON SEMICONDUCTOR

单晶体管 双极, 通用, NPN, 45 V, 100 MHz, 300 mW, 500 mA, 100 hFE

VISHAY

晶体管, MOSFET, N沟道, 35 A, 20 V, 0.003 ohm, 10 V, 1 V

ON SEMICONDUCTOR/FAIRCHILD

单晶体管 双极, NPN, 30 V, 300 MHz, 500 mW, 100 mA, 200 hFE

DIODES INC.

双路场效应管, MOSFET, 双P沟道, -7.6 A, -40 V, 0.018 ohm, -10 V, -1.3 V

ON SEMICONDUCTOR

双路场效应管, MOSFET, N和P沟道, 2.9 A, 20 V, 0.058 ohm, 4.5 V, 600 mV

ON SEMICONDUCTOR/FAIRCHILD

场效应管, MOSFET, 双路N沟道, 30V, 250UΩ, 750mA, SC-70-6

VISHAY

晶体管, MOSFET, P沟道, -40 A, -20 V, 0.004 ohm, -10 V, -2.2 V

STMICROELECTRONICS

晶体管, MOSFET, N沟道, 9 A, 300 V, 400 mohm, 10 V, 3.75 V

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 4 A, 650 V, 1.2 ohm, 10 V, 3 V

VISHAY

场效应管, MOSFET, N沟道

VISHAY

功率场效应管, MOSFET, N沟道, 29 A, 600 V, 0.104 ohm, 10 V, 2 V

STMICROELECTRONICS

单晶体管 双极, 达林顿, NPN, 450 V, 80 W, 5 A, 22 hFE

VISHAY

MOSFET, N CHANNEL, 60V, 2.7A, SOT-223-4

ON SEMICONDUCTOR/FAIRCHILD

双路场效应管, MOSFET, 双P沟道, 2.5 A, -12 V, 90 mohm, -4.5 V, 700 mV

VISHAY

晶体管, MOSFET, P沟道, -5.8 A, -8 V, 0.028 ohm, -4.5 V, -1 V

ON SEMICONDUCTOR/FAIRCHILD

单晶体管 双极, NPN, 160 V, 100 MHz, 900 mW, 1 A, 160 hFE

DIODES INC.

晶体管, MOSFET, N沟道, 1.7 A, 20 V, 180 mohm, 4.5 V, 700 mV

ON SEMICONDUCTOR

晶体管, MOSFET, N沟道, 9 A, 60 V, 153 mohm, 5 V, 1.7 V

STMICROELECTRONICS

双路场效应管, MOSFET, 双P沟道, -4 A, -30 V, 0.07 ohm, 10 V, 1 V