TOSHIBA

晶体管, MOSFET, 功率, N沟道, 28 A, 60 V, 0.0066 ohm, 10 V, 1.3 V

ON SEMICONDUCTOR/FAIRCHILD

场效应管, MOSFET, P沟道, -100V, 1A SOT-223

INFINEON

晶体管, MOSFET, N沟道, 45 A, 100 V, 16.7 mohm, 10 V, 3 V

ON SEMICONDUCTOR/FAIRCHILD

单晶体管 双极, PNP, -30 V, 80 MHz, 10 W, -3 A, 30 hFE

VISHAY

晶体管, MOSFET, N沟道, 16 A, 60 V, 0.01 ohm, 10 V, 3 V

TEXAS INSTRUMENTS

晶体管, MOSFET, N沟道, 500 mA, 20 V, 0.99 ohm, 8 V, 1.1 V

VISHAY

双路场效应管, MOSFET, 双P沟道, -2.4 A, -60 V, 100 mohm, -10 V, -3 V

ON SEMICONDUCTOR/FAIRCHILD

单晶体管 双极, PNP, -30 V, 150 MHz, 500 mW, -100 mA, 200 hFE

VISHAY

晶体管, MOSFET, N沟道, 42 A, 150 V, 0.0372 ohm, 10 V, 4 V

STMICROELECTRONICS

单晶体管 双极, 达林顿, NPN, 80 V, 65 W, 5 A, 1000 hFE

INFINEON

功率场效应管, MOSFET, N沟道, 7.3 A, 650 V, 0.54 ohm, 10 V, 3 V

ON SEMICONDUCTOR/FAIRCHILD

双路场效应管, MOSFET, 双N沟道, 9.4 A, 20 V, 14 mohm, 4.5 V, 1 V

ON SEMICONDUCTOR

晶体管, MOSFET, N沟道, 37 A, 60 V, 0.0101 ohm, 10 V, 1.5 V

MULTICOMP

单晶体管 双极, 通用, NPN, 100 V, 3 MHz, 65 W, 6 A, 15 hFE

STMICROELECTRONICS

晶体管, MOSFET, N沟道, 40 A, 30 V, 4.6 mohm, 10 V, 2.5 V

INTERNATIONAL RECTIFIER

场效应管, MOSFET, N沟道, 60V, 1.2A

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 4 A, 650 V, 1.2 ohm, 10 V, 3 V

DIODES INC.

晶体管, MOSFET, N沟道, 7.2 A, 40 V, 50 mohm, 10 V, 1 V

ROHM

晶体管 双极预偏置/数字, 单路PNP, -50 V, -500 mA, 10 kohm, 10 kohm, 1 电阻比率

ON SEMICONDUCTOR

单晶体管 双极, PNP, -25 V, 65 MHz, 12.5 W, -5 A, 10 hFE

INFINEON

晶体管, MOSFET, N沟道, 90 A, 40 V, 0.0011 ohm, 10 V, 3 V

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 18 A, 60 V, 0.0037 ohm, 10 V, 3.1 V

INFINEON

晶体管, MOSFET, N沟道, 56 A, 30 V, 0.012 ohm, 10 V, 1 V

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 12 A, 60 V, 0.0088 ohm, 10 V, 4 V

ON SEMICONDUCTOR/FAIRCHILD

单晶体管 双极, 双NPN, 60 V, 65 W, 5 A, 1000 hFE