ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 500 mA, 60 V, 1.2 ohm, 10 V, 2.1 V

ON SEMICONDUCTOR/FAIRCHILD

MOSFET, N CHANNEL, 30V, 0.0096OHM, 16.5A, MLP-8

INFINEON

晶体管 双极-射频, NPN, 4.5 V, 30 GHz, 250 mW, 80 mA, 50 hFE

ON SEMICONDUCTOR

MOSFET Transistor, P Channel, -4.8 A, -20 V, 21 mohm, -4.5 V, -1.5 V

INTERNATIONAL RECTIFIER

晶体管, 单路, IGBT, 600V, 60A

INFINEON

双路场效应管, MOSFET, 双N沟道, 6.5 A, 30 V, 0.023 ohm, 10 V, 1 V

VISHAY

晶体管, MOSFET, N沟道, 5 A, 150 V, 0.041 ohm, 10 V, 2 V

INFINEON

晶体管, MOSFET, P沟道, 6.6 A, -100 V, 480 mohm, -10 V, -4 V

ON SEMICONDUCTOR

晶体管, MOSFET, P沟道, 760 mA, -20 V, 0.26 ohm, -4.5 V, -450 mV

NEXPERIA

晶体管 双极预偏置/数字, BRT, 双路 PNP, 50 V, -100 mA, 47 kohm, 47 kohm

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 10 A, 600 V, 750 mohm, 10 V, 3.75 V

INFINEON

晶体管, MOSFET, N沟道, 44 A, 55 V, 27 mohm, 10 V, 4 V

RENESAS

晶体管, MOSFET, P沟道, -1.8 A, -60 V, 0.158 ohm, -10 V

VISHAY

双路场效应管, MOSFET, 双P沟道, -4 A, -20 V, 48 mohm, -4.5 V, -1.4 V

ON SEMICONDUCTOR

达林顿双极晶体管

ON SEMICONDUCTOR/FAIRCHILD

双路场效应管, MOSFET, N和P沟道, 6.2 A, 40 V, 0.021 ohm, 10 V, 1.9 V

VISHAY

晶体管, MOSFET, P沟道, -6 A, -20 V, 0.032 ohm, -4.5 V, -400 mV

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 15 A, 30 V, 0.016 ohm, 10 V, 1.9 V

VISHAY

晶体管, MOSFET, N沟道, 30 A, 20 V, 0.0041 ohm, 10 V, 600 mV

ON SEMICONDUCTOR/FAIRCHILD

晶体管, PNP, -40V, TO-92

ON SEMICONDUCTOR

晶体管 双极预偏置/数字, BRT, NPN和PNP执行, 50 V, 100 mA, 10 kohm, 47 kohm, 4.7 电阻比率

ON SEMICONDUCTOR

场效应管, MOSFET, N沟道, 60V, 20A, D-PAK

VISHAY

NPN/PNP MOSFET, 60V, SOIC

TEXAS INSTRUMENTS

晶体管, NPN, 50V, 500MA, SOIC-16

INFINEON

晶体管, MOSFET, N沟道, 7.7 A, 100 V, 180 mohm, 10 V, 2 V