DIODES INC.

晶体管, MOSFET, P沟道, -10 A, -20 V, 0.008 ohm, -10 V, 770 mV

ON SEMICONDUCTOR

双极性晶体管, NPN, 100V D-PAK

ON SEMICONDUCTOR

单晶体管 双极, 音频, PNP, 100 V, 40 MHz, 1.5 W, 4 A, 40 hFE

ON SEMICONDUCTOR/FAIRCHILD

场效应管, MOSFET, N沟道

ON SEMICONDUCTOR

场效应管, MOSFET, N沟道, 60V, 3A, SOT-223

ON SEMICONDUCTOR/FAIRCHILD

MOSFET, P CHANNEL, -35V, 0.045OHM, -4.3A, SUPERSOT-6

ON SEMICONDUCTOR

电源晶体管, PNP, -70V, TO-220

NEXPERIA

双极晶体管阵列, PNP, -45 V, 390 mW, -100 mA, 290 hFE, SOT-143B

DIODES INC.

单晶体管 双极, NPN, 60 V, 130 MHz, 1.2 W, 5 A, 200 hFE

NEXPERIA

单晶体管 双极, 通用, PNP, -80 V, 50 MHz, 250 mW, -500 mA, 100 hFE

INFINEON

晶体管, MOSFET, P沟道, -31 A, -55 V, 0.065 ohm, -10 V, -4 V

MULTICOMP

晶体管, 单结(UJT), 1.5 A, 1 μA, 5 mA, TO-92, 3引脚, 125 °C

INFINEON

双路场效应管, MOSFET, N和P沟道, 4.3 A, 20 V, 50 mohm, 4.5 V, 700 mV

NEXPERIA

晶体管, MOSFET, N沟道, 100 A, 25 V, 2.3 mohm, 4.5 V, 700 mV

VISHAY

晶体管, MOSFET, P沟道, -55 A, -60 V, 15 mohm, -10 V, -1 V

INFINEON

晶体管, MOSFET, N沟道, 2.7 A, 55 V, 160 mohm, 10 V, 4 V

MULTICOMP

单晶体管 双极, 通用, NPN, 60 V, 2 MHz, 75 W, 10 A, 20 hFE

NXP

晶体管 双极-射频, NPN, 15 V, 9 GHz, 300 mW, 70 mA, 120 hFE

VISHAY

场效应管, P沟道, MOSFET

ROHM

晶体管 双极预偏置/数字, AEC-Q101, 双路 NPN, 50 V, 100 mA, 10 kohm, 10 kohm

VISHAY

场效应管, MOSFET, N沟道

VISHAY

晶体管, MOSFET, P沟道, -1.9 A, -200 V, 3 ohm, -10 V, -4 V

ON SEMICONDUCTOR/FAIRCHILD

双路场效应管, MOSFET, 双N沟道, 3.5 A, 100 V, 0.047 ohm, 10 V, 3.1 V

VISHAY

晶体管, MOSFET, N沟道, 8 A, 500 V, 850 mohm, 10 V, 4 V

INFINEON

晶体管, MOSFET, P沟道, -12.6 A, -30 V, 0.0067 ohm, -10 V, -1.5 V