INFINEON

功率场效应管, MOSFET, N沟道, 21 mA, 600 V, 280 ohm, 10 V, -2 V

DIODES INC.

晶体管, MOSFET, N沟道, 4.2 A, 20 V, 0.025 ohm, 4.5 V, 1 V

ROHM

晶体管 双极预偏置/数字, AEC-Q101, 单路PNP, -50 V, -100 mA, 10 kohm, 47 kohm, 0.21 电阻比率

INFINEON

场效应管, MOSFET, P沟道, -30V, -1.5A, SOT-23-3

VISHAY

MOSFET, N CHANNEL, 20V, 0.00155OHM, 46A, SOIC-8

ON SEMICONDUCTOR/FAIRCHILD

单晶体管 双极, NPN, 45 V, 330 MHz, 350 mW, 500 mA, 110 hFE

INFINEON

功率场效应管, MOSFET, N沟道, 4 A, 800 V, 1.2 ohm, 10 V, 3 V

INFINEON

晶体管, MOSFET, P沟道, -12 A, -30 V, 0.0085 ohm, -20 V, -1.8 V

INFINEON

场效应管, MOSFET, P沟道

INFINEON

单晶体管, IGBT, 50 A, 1.9 V, 179 W, 1.2 kV, TO-247AC, 3 引脚

ON SEMICONDUCTOR

晶体管, MOSFET, N沟道, 915 mA, 20 V, 0.127 ohm, 4.5 V, 760 mV

ON SEMICONDUCTOR

场效应管, MOSFET, P沟道, -60V, 18.5A, D2-PAK

VISHAY

场效应管, MOSFET, P沟道, 30V, 11.4A

NEXPERIA

晶体管, MOSFET, N沟道, 23 A, 100 V, 75 mohm, 10 V, 3 V

INFINEON

晶体管, MOSFET, N沟道, 4.5 A, 60 V, 0.049 ohm, 10 V, 1.8 V

VISHAY

晶体管, MOSFET, P沟道, -1.6 A, -60 V, 285 mohm, -10 V, -1 V

VISHAY

晶体管, MOSFET, P沟道, -2.9 A, -60 V, 0.18 ohm, -10 V, -3 V

DIODES INC.

单晶体管 双极, 通用, PNP, -100 V, 140 MHz, 1 W, -2 A, 100 hFE

INFINEON

晶体管 双极-射频, NPN, 12 V, 8 GHz, 580 mW, 80 mA, 70 hFE

INTERNATIONAL RECTIFIER

场效应管, N 通道, MOSFET, 30V, 7A, SOICSIS

VISHAY

晶体管, MOSFET, P沟道, -2.1 A, -20 V, 0.116 ohm, -4.5 V, 600 mV

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, P沟道, -2.1 A, -80 V, 0.147 ohm, -10 V, -1.6 V

NEXPERIA

单晶体管 双极, NPN, 40 V, 550 mW, 5 A, 300 hFE

VISHAY

晶体管, MOSFET, N沟道, 30 A, 20 V, 0.0046 ohm, 10 V, 2.5 V

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 16 A, 30 V, 0.0124 ohm, 10 V, 1.9 V