
INFINEON
晶体管, MOSFET, P沟道, -19 A, -55 V, 0.1 ohm, -10 V, -4 V

ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 60 V, 160 MHz, 750 mW, 1 A, 200 hFE

INTERNATIONAL RECTIFIER
场效应管, MOSFET, P沟道, -30V, -2.3 A, SOT-23

DIODES INC.
双路场效应管, MOSFET, 双N沟道, 5 A, 60 V, 0.03 ohm, 10 V, 3 V

ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 7.9 A, 30 V, 0.017 ohm, 10 V, 1.7 V

STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 6 A, 600 V, 1.2 ohm, 10 V, 3.75 V

INFINEON
晶体管 双极-射频, NPN, 4.5 V, 25 GHz, 210 mW, 60 mA, 60 hFE

VISHAY
晶体管, MOSFET, N沟道, 12 A, 20 V, 0.0125 ohm, 4.5 V, 400 mV

ON SEMICONDUCTOR
双极晶体管

ON SEMICONDUCTOR
晶体管, JFET, JFET, -25 V, 12 mA, 30 mA, -4 V, SOT-23, JFET

ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 5.5 A, 30 V, 0.032 ohm, 10 V, 1.5 V

TEXAS INSTRUMENTS
晶体管, MOSFET, FemtoFET™, P沟道, -1.7 A, -20 V, 0.11 ohm, -8 V, -950 mV