VISHAY

晶体管, MOSFET, P沟道, -8.1 A, -30 V, 19.5 mohm, -10 V, -3 V

VISHAY

晶体管, MOSFET, N沟道, 2.5 A, 500 V, 3 ohm, 10 V, 4 V

ON SEMICONDUCTOR

BJT, NPN, 80V SOT-23

VISHAY

功率场效应管, MOSFET, N沟道, 7 A, 650 V, 0.5 ohm, 10 V, 2 V

ON SEMICONDUCTOR

单晶体管 双极, PNP, 45 V, 300 mW, 500 mA, 100 hFE

INFINEON

晶体管, MOSFET, N沟道, 12 A, 30 V, 0.011 ohm, 10 V, 3 V

NEXPERIA

单晶体管 双极, NPN, 300 V, 50 MHz, 250 mW, 100 mA, 40 hFE

VISHAY

晶体管, MOSFET, P沟道, -185 mA, -60 V, 10 ohm, -4.5 V, -2 V

ON SEMICONDUCTOR/FAIRCHILD

单晶体管 双极, NPN, 65 V, 300 MHz, 500 mW, 100 mA, 110 hFE

INFINEON

晶体管, MOSFET, N沟道, 40 A, 100 V, 0.0083 ohm, 10 V, 3 V

INFINEON

晶体管, MOSFET, N沟道, 46 A, 100 V, 23 mohm, 10 V, 4 V

VISHAY

晶体管, MOSFET, N沟道, 21.5 A, 12 V, 0.0042 ohm, 4.5 V, 1 V

NXP

晶体管 双极-射频, NPN, 4.5 V, 25 GHz, 135 mW, 25 mA, 80 hFE

VISHAY

晶体管, MOSFET, N沟道, 35 A, 12 V, 3.1 mohm, 4.5 V, 400 mV

MULTICOMP

单晶体管 双极, 通用, NPN, 45 V, 3 MHz, 36 W, 4 A, 85 hFE

NEXPERIA

单晶体管 双极, NPN, 40 V, 230 MHz, 300 mW, 2 A, 470 hFE

INFINEON

晶体管, MOSFET, P沟道, -13 A, -100 V, 0.205 ohm, -10 V, -4 V

ON SEMICONDUCTOR

Dual MOSFET, Dual N Channel, 17 A, 60 V, 0.031 ohm, 10 V, 3 V

ON SEMICONDUCTOR

晶体管, MOSFET, P沟道, -4 A, -60 V, 0.077 ohm, -10 V, -2.6 V

NEXPERIA

晶体管, MOSFET, N沟道, 100 A, 30 V, 1.4 mohm, 10 V, 1.7 V

ON SEMICONDUCTOR

晶体管, MOSFET, P沟道, -25 A, -60 V, 0.033 ohm, -10 V, -2.6 V

MULTICOMP

单晶体管 双极, NPN, 45 V, 170 MHz, 330 mW, 800 mA, 630 hFE

ON SEMICONDUCTOR

功率晶体管, PNP, -100V, D-PAK

INFINEON

功率场效应管, MOSFET, N沟道, HEXFET, 150V, 33A, DPAK

ON SEMICONDUCTOR

场效应管, MOSFET, N沟道, 25V, 750mA, SOT-323