ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 50 A, 75 V, 13 mohm, 10 V, 4 V

INFINEON

单晶体管, IGBT, 20 A, 1.4 V, 125 W, 430 V, TO-263, 3 引脚

NEXPERIA

双路场效应管, MOSFET, 双P沟道, -220 mA, -30 V, 2.8 ohm, -4.5 V, -900 mV

NEXPERIA

晶体管, MOSFET, P沟道, -5.7 A, -20 V, 0.027 ohm, -4.5 V, -700 mV

INFINEON

晶体管, MOSFET, N沟道, 20 A, 60 V, 0.009 ohm, 10 V, 3 V

INFINEON

晶体管, MOSFET, N沟道, 80 A, 75 V, 0.00734 ohm, 10 V, 4 V

ON SEMICONDUCTOR

晶体管, MOSFET, N沟道, 250 A, 60 V, 0.0011 ohm, 10 V, 2 V

VISHAY

双路场效应管, MOSFET, 双N沟道, 370 mA, 60 V, 1.4 ohm, 10 V, 2.5 V

INFINEON

晶体管, MOSFET, P沟道, -7 A, -30 V, 0.026 ohm, -10 V, -2.5 V

INTERNATIONAL RECTIFIER

场效应管, MOSFET, P沟道

INFINEON

晶体管, MOSFET, N沟道, 6.5 A, 20 V, 30 mohm, 4.5 V, 1.2 V

VISHAY

双路场效应管, MOSFET, 双N沟道, 28 A, 30 V, 0.01 ohm, 10 V, 1.2 V

DIODES INC.

单晶体管 双极, PNP, 400 V, 50 MHz, 500 mW, -150 mA, 100 hFE

ON SEMICONDUCTOR/FAIRCHILD

双路场效应管, MOSFET, N和P沟道, 220 mA, 25 V, 3.1 ohm, 4.5 V, 850 mV

MICROCHIP

晶体管, MOSFET, N沟道, 42 A, 25 V, 0.0173 ohm, 3.3 V, 1.35 V

DIODES INC.

单晶体管 双极, 高增益, PNP, 20 V, 290 MHz, 350 mW, 4 A, 450 hFE

VISHAY

MOSFET, N & P CHANNEL, 20V, 6.7A, TSSOP-8

ON SEMICONDUCTOR

晶体管, MOSFET, N沟道, 136 A, 30 V, 0.0015 ohm, 10 V, 2.2 V

NEXPERIA

单晶体管 双极, NPN, 40 V, 153 MHz, 1.35 W, 6 A, 60 hFE

TEXAS INSTRUMENTS

晶体管, MOSFET, N沟道, 100 A, 100 V, 0.0053 ohm, 10 V, 2.7 V

MICROCHIP

晶体管, MOSFET, P沟道, 2 A, -6 V, 0.07 ohm, -4.5 V, -1.2 V

MULTICOMP

单晶体管 双极, 达林顿, NPN, 80 V, 4 MHz, 150 W, 12 A, 750 hFE

ON SEMICONDUCTOR

晶体管, MOSFET, N沟道, 50 A, 60 V, 0.0077 ohm, 10 V, 2 V

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 4 A, 150 V, 0.101 ohm, 10 V, 4 V

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 21 A, 200 V, 0.11 ohm, 10 V, 2 V