ON SEMICONDUCTOR

晶体管, MOSFET, N沟道, 78 A, 40 V, 0.0037 ohm, 10 V, 2 V

NEXPERIA

晶体管, MOSFET, NextPowerS3, N沟道, 300 A, 25 V, 0.00072 ohm, 10 V, 1.73 V

NEXPERIA

晶体管 双极预偏置/数字, NPN和PNP执行, 50 V, 100 mA, 4.7 kohm, 47 kohm

VISHAY

晶体管, MOSFET, N沟道, 190 mA, 60 V, 2 ohm, 10 V, 1 V

VISHAY

晶体管, MOSFET, P沟道, -4.4 A, -40 V, 0.064 ohm, -10 V, -1.2 V

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 40 A, 60 V, 16 mohm, 10 V, 4 V

ON SEMICONDUCTOR

晶体管, MOSFET, N沟道, 37 A, 40 V, 0.0086 ohm, 10 V, 2 V

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, P沟道, -7.8 A, -20 V, 27 mohm, -4.5 V, -700 mV

NEXPERIA

单晶体管 双极, 双PNP, -30 V, 125 MHz, 2 W, -1 A, 120 hFE

INFINEON

单晶体管, IGBT, 40 A, 4.23 V, 300 W, 1.2 kV, TO-247AD, 3 引脚

ON SEMICONDUCTOR

双极性晶体管, PNP, -60V

ON SEMICONDUCTOR/FAIRCHILD

双路场效应管, MOSFET, N和P沟道, 3.9 A, 30 V, 53 mohm, 10 V, 3 V

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 120 A, 100 V, 0.0039 ohm, 10 V, 3.5 V

INFINEON

场效应管, MOSFET, N沟道, 30V, 3.4A, 3-SOT-23

INFINEON

晶体管, MOSFET, P沟道, -8.83 A, -60 V, 0.23 ohm, -6.2 V, -3 V

INFINEON

晶体管, MOSFET, N沟道, 50 A, 60 V, 0.0071 ohm, 10 V, 3 V

VISHAY

场效应管, MOSFET, P沟道, -8V, 1.6A, SC-70

VISHAY

晶体管, MOSFET, N沟道, 9.5 A, 80 V, 16.5 mohm, 10 V, 2 V

VISHAY

晶体管, N沟道

NEXPERIA

晶体管, MOSFET, N沟道, 86 A, 60 V, 0.006 ohm, 10 V, 1.7 V

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, P沟道, 8 A, -100 V, 410 mohm, -10 V, -4 V

INFINEON

晶体管, MOSFET, N沟道, 29 A, 55 V, 40 mohm, 10 V, 4 V

VISHAY

MOSFET, P CHANNEL, -20V, -6A, SOT-23-3

ON SEMICONDUCTOR

晶体管 双极预偏置/数字, BRT, 单路NPN, 50 V, 100 mA, 10 kohm, 10 kohm, 1 电阻比率

ON SEMICONDUCTOR/FAIRCHILD

双路场效应管, MOSFET, 双P沟道, -2.9 A, -60 V, 0.082 ohm, -10 V, -1.6 V