
NEXPERIA
单晶体管 双极, AEC-Q101, PNP, -100 V, 90 MHz, 1.5 W, -10 A, 10 hFE

INFINEON
晶体管, MOSFET, N沟道, 63 A, 100 V, 12.2 mohm, 10 V, 1.85 V

TEXAS INSTRUMENTS
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, 1000 hFE, SOIC

ON SEMICONDUCTOR/FAIRCHILD
MOSFET, P CHANNEL, -30V, 0.0027OHM, -49A, POWER 56-8

IXYS SEMICONDUCTOR
晶体管, MOSFET, HiPerFET, N沟道, 26 A, 500 V, 200 mohm, 10 V, 4.5 V

STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 400 mA, 600 V, 13 ohm, 10 V, 3.75 V

ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 9 A, 600 V, 0.33 ohm, 10 V, 3 V

ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 13 A, 500 V, 0.43 ohm, 10 V, 4 V

ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, PNP, -100 V, 3 MHz, 1.75 W, -6 A, 15 hFE

STMICROELECTRONICS
晶体管, MOSFET, N沟道, 4.4 A, 500 V, 1.22 ohm, 10 V, 3.75 V

ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 400 V, 200 MHz, 625 mW, 20 hFE

ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 32 A, 60 V, 27 mohm, 10 V, 2.5 V

INFINEON
晶体管, MOSFET, N沟道, 180 A, 60 V, 0.0012 ohm, 10 V, 1.7 V

ON SEMICONDUCTOR
Dual MOSFET, Dual P Channel, -880 mA, -20 V, 0.215 ohm, -4.5 V, -1.2 V

INFINEON
晶体管, MOSFET, N沟道, 180 A, 120 V, 0.0029 ohm, 10 V, 3 V

DIODES INC.
晶体管, MOSFET, P沟道, -7.3 A, -30 V, 0.013 ohm, -20 V, -1.7 V

ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 7 A, 100 V, 0.019 ohm, 10 V, 3.1 V