TEXAS INSTRUMENTS

晶体管, MOSFET, N沟道, 56 A, 30 V, 0.0059 ohm, 8 V, 1.3 V

STMICROELECTRONICS

晶体管, MOSFET, P沟道, -80 A, -55 V, 18 mohm, -10 V, -3 V

ON SEMICONDUCTOR/FAIRCHILD

晶体管, P沟道, -30V, 8.8A, SOIC

ON SEMICONDUCTOR/FAIRCHILD

晶体管, 射频FET, 35 V, 625 mW, TO-92

MULTICOMP

单晶体管 双极, NPN, 65 V, 100 MHz, 250 mW, 100 mA, 110 hFE

INFINEON

晶体管, MOSFET, N沟道, 60 A, 100 V, 0.0103 ohm, 10 V, 4.8 V

NEXPERIA

晶体管 双极预偏置/数字, BRT, 单路PNP, -50 V, -100 mA, 10 kohm, 10 kohm

ON SEMICONDUCTOR

达林顿双极晶体管

ON SEMICONDUCTOR

Bipolar (BJT) Single Transistor, PNP, -80 V, 50 MHz, 1.5 W, -1.5 A, 25 hFE

NEXPERIA

晶体管 双极预偏置/数字, BRT, 单路NPN, 50 V, 100 mA, 2.2 kohm, 2.2 kohm, 1 电阻比率

INTERNATIONAL RECTIFIER

场效应管, P通道, MOSFET, -100V, -23A, TO-220AB

NEXPERIA

开关晶体管, NPN, 40V, 600mA, 3-SOT-23

VISHAY

晶体管, MOSFET, P沟道, -8.9 A, -150 V, 0.262 ohm, -10 V

MULTICOMP

单晶体管 双极, 达林顿, PNP, -100 V, 80 W, -12 A, 1000 hFE

VISHAY

晶体管, MOSFET, N沟道, 9.2 A, 100 V, 270 mohm, 10 V, 4 V

VISHAY

双路场效应管, MOSFET, 双N沟道, 4.5 A, 20 V, 0.035 ohm, 4.5 V

ON SEMICONDUCTOR

双极性晶体管, NPN, 40V TO-225

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 54 A, 30 V, 11.6 mohm, 10 V, 2.5 V

ON SEMICONDUCTOR/FAIRCHILD

单晶体管 双极, PNP, -160 V, 50 MHz, 900 mW, -1 A, 160 hFE

ON SEMICONDUCTOR/FAIRCHILD

晶体管, JFET, JFET, -25 V, 8 mA, 20 mA, -6 V, SOT-23, RF FET

ON SEMICONDUCTOR

场效应管, MOSFET, P沟道, -60V, 2.6A, SOT-223

ON SEMICONDUCTOR

晶体管 双极预偏置/数字, BRT, 单路PNP, 50 V, -100 mA, 10 kohm

ON SEMICONDUCTOR

单晶体管 双极, NPN, 40 V, 3 MHz, 15 W, 3 A, 10 hFE

ON SEMICONDUCTOR

晶体管, MOSFET, N沟道, 41 A, 30 V, 0.0065 ohm, 10 V, 1.7 V

ON SEMICONDUCTOR

晶体管, MOSFET, N沟道, 101 A, 40 V, 0.0036 ohm, 10 V, 3.5 V