VISHAY

MOSFET, N CHANNEL, 30V, 40A, SOIC-8

TEXAS INSTRUMENTS

晶体管, MOSFET, N沟道, 89 A, 40 V, 0.0041 ohm, 10 V, 1.8 V

INTERNATIONAL RECTIFIER

晶体管, 单路, IGBT, 430V, 20A

NEXPERIA

单晶体管 双极, NPN, 150 V, 30 MHz, 300 mW, 1 A, 250 hFE

INFINEON

晶体管, MOSFET, 汽车, N沟道, 110 A, 55 V, 6.5 mohm, 10 V, 4 V

NEXPERIA

单晶体管 双极, NPN, 100 V, 145 MHz, 1.5 W, 10 A, 25 hFE

TEXAS INSTRUMENTS

双路场效应管, MOSFET, 双N沟道, 40 A, 30 V, 0.005 ohm, 4.5 V, 2.1 V

VISHAY

MOSFET, N CHANNEL, 60V, 2.7A, SOT-223-4

ON SEMICONDUCTOR/FAIRCHILD

单晶体管 双极, NPN, 25 V, 120 MHz, 200 mW, 800 mA, 160 hFE

INFINEON

晶体管, MOSFET, N沟道, 13 A, 200 V, 0.235 ohm, 10 V, 5.5 V

STMICROELECTRONICS

单晶体管 双极, NPN, 60 V, 130 MHz, 1.6 W, 5 A, 300 hFE

ON SEMICONDUCTOR/FAIRCHILD

单晶体管 双极, PNP, -60 V, 200 MHz, 350 mW, -600 mA, 50 hFE

ON SEMICONDUCTOR

晶体管, MOSFET, N沟道, 41 A, 30 V, 0.0069 ohm, 10 V, 1.8 V

MULTICOMP

单晶体管 双极, NPN, 450 V, 125 W, 8 A

INFINEON

晶体管, MOSFET, P沟道, -90 A, -30 V, 0.0036 ohm, -10 V, -3 V

VISHAY

晶体管, MOSFET, P沟道, 3 A, -100 V, 1.2 ohm, -10 V, -4 V

NEXPERIA

双路场效应管, MOSFET, N和P沟道, 2.2 A, 30 V, 0.08 ohm, 10 V, 2.8 V

TEXAS INSTRUMENTS

双极晶体管阵列, 达林顿, NPN, 100 V, 500 mA, SOIC

STMICROELECTRONICS

单晶体管 双极, NPN, 300 V, 20.8 W, 500 mA, 240 hFE

ON SEMICONDUCTOR/FAIRCHILD

单晶体管 双极, PNP, -60 V, 75 MHz, 2 W, -3 A, 25 hFE

STMICROELECTRONICS

单晶体管 双极, NPN, 100 V, 25 MHz, 20 W, 2 A, 1000 hFE

INFINEON

晶体管, MOSFET, 通用, N沟道, 42 A, 100 V, 36 mohm, 10 V, 4 V

VISHAY

晶体管, MOSFET, P沟道, 5.1 A, -60 V, 500 mohm, -10 V, -4 V

NEXPERIA

单晶体管 双极, 通用, PNP, -60 V, 200 MHz, 250 mW, -600 mA, 100 hFE

ON SEMICONDUCTOR/FAIRCHILD

双路场效应管, MOSFET, 双N沟道, 750 mA, 30 V, 0.25 ohm, 4.5 V, 1 V