DIODES INC.

双路场效应管, MOSFET, AEC-Q101, 双N沟道, 260 mA, 30 V, 2.8 ohm, 10 V, 1.5 V

NEXPERIA

晶体管 双极预偏置/数字, 双路 PNP, -50 V, -100 mA, 10 kohm, 47 kohm

NEXPERIA

晶体管, MOSFET, N沟道, 40 A, 40 V, 0.00484 ohm, 10 V, 1.7 V

STMICROELECTRONICS

晶体管, MOSFET, N沟道, 30 A, 60 V, 0.032 ohm, 10 V, 2.5 V

STMICROELECTRONICS

单晶体管 双极, 达林顿, PNP, 60 V, 40 W, 4 A, 750 hFE

NEXPERIA

单晶体管 双极, PNP, -250 V, 60 MHz, 250 mW, -50 mA, 50 hFE

MICROCHIP

功率场效应管, MOSFET, N沟道, 300 mA, 650 V, 8 ohm, 0 V

DIODES INC.

单晶体管 双极, PNP, -100 V, 200 MHz, 625 mW, -1 A, 300 hFE

INFINEON

晶体管, MOSFET, N沟道, 100 A, 80 V, 3.9 mohm, 10 V, 2.8 V

INTERNATIONAL RECTIFIER

场效应管, N 通道, MOSFET, 55V, 2A, SOT-223

INFINEON

功率场效应管, MOSFET, N沟道, 46 A, 650 V, 0.04 ohm, 10 V, 3.5 V

INFINEON

场效应管, MOSFET, N沟道, HEXFET, 60V, 79A, D2PAK

INFINEON

晶体管, MOSFET, N沟道, 65 A, 30 V, 0.0075 ohm, 10 V, 1 V

INFINEON

晶体管, MOSFET, N沟道, 94 A, 200 V, 23 mohm, 10 V, 5 V

TEXAS INSTRUMENTS

晶体管, MOSFET, N沟道, 2.2 A, 60 V, 0.054 ohm, 10 V, 1.75 V

DIODES INC.

晶体管, MOSFET, 增强模式, P沟道, -5.4 A, -30 V, 0.045 ohm, -10 V, -1 V

VISHAY

晶体管, MOSFET, N沟道, 1.7 A, 60 V, 200 mohm, 5 V, 2 V

VISHAY

晶体管, MOSFET, P沟道, -36 A, -30 V, 0.0027 ohm, -10 V, -2.5 V

ON SEMICONDUCTOR

双极性晶体管, PNP, -100V, TO-220

VISHAY

晶体管, MOSFET, P沟道, 11 A, -200 V, 500 mohm, -10 V, 4 V

ON SEMICONDUCTOR

晶体管, PNP

ON SEMICONDUCTOR/FAIRCHILD

单晶体管 双极, PNP, -45 V, 12.5 W, -1.5 A, 100 hFE

TEXAS INSTRUMENTS

晶体管, MOSFET, N沟道, 100 A, 25 V, 0.0019 ohm, 4.5 V, 1.1 V

ON SEMICONDUCTOR

晶体管, MOSFET, N沟道, 19 A, 60 V, 0.0038 ohm, 10 V, 2 V

INFINEON

场效应管, MOSFET, N沟道, 200V, 44A, D2-PAK