DIODES INC.

双路场效应管, MOSFET, AEC-Q101, 双P沟道, -2 A, -20 V, 0.15 ohm, -4.5 V, -1 V

ON SEMICONDUCTOR

晶体管 双极预偏置/数字, BRT, 单路NPN, 50 V, 100 mA, 47 kohm, 47 kohm, 1 电阻比率

ON SEMICONDUCTOR

单晶体管 双极, NPN, 60 V, 3 MHz, 40 W, 3 A, 10 hFE

ON SEMICONDUCTOR/FAIRCHILD

单晶体管 双极, 达林顿, NPN, 350 V, 10 MHz, 2 W, 1 A, 150 hFE

STMICROELECTRONICS

Bipolar (BJT) Array Transistor, Darlington, NPN, 50V, 2.25W, 500mA, hFE 1000, PDIP-18

DIODES INC.

晶体管, MOSFET, P沟道, -1.5 A, -20 V, 0.092 ohm, -4.5 V, -1 V

ON SEMICONDUCTOR

晶体管 双极预偏置/数字, BRT, NPN和PNP执行, 50 V, 100 mA, 10 kohm, 10 kohm, 1 电阻比率

ON SEMICONDUCTOR

单晶体管 双极, PNP, -60 V, 40 W, -4 A, 750 hFE

NEXPERIA

单晶体管 双极, NPN, 45 V, 100 MHz, 250 mW, 100 mA, 420 hFE

ON SEMICONDUCTOR

晶体管, JFET, -30 V, 1.2 mA, 3 mA, -1.5 V, SOT-883, JFET

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 39 A, 200 V, 66 mohm, 10 V, 5 V

INFINEON

晶体管, MOSFET, P沟道, 40 A, -100 V, 60 mohm, -10 V, -4 V

INFINEON

双路场效应管, MOSFET, N和P沟道, 2.3 A, 25 V, 100 mohm, 10 V, 3 V

INTERNATIONAL RECTIFIER

场效应管, MOSFET

STMICROELECTRONICS

双路场效应管, MOSFET, N和P沟道, 8 A, 30 V, 0.018 ohm, 10 V, 1.6 V

MICROCHIP

晶体管, MOSFET, N沟道, 100 mA, 450 V, 60 ohm, 0 V

ON SEMICONDUCTOR

场效应管, N通道, MOSFET, 20V, 20A, D-PAK

MULTICOMP

单晶体管 双极, 通用, PNP, -60 V, 3 MHz, 65 W, -6 A, 30 hFE

INFINEON

场效应管, MOSFET, P沟道, -20V, -1.5A, SOT-363-6

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 5 A, 30 V, 0.0236 ohm, 4.5 V, 810 mV

ON SEMICONDUCTOR/FAIRCHILD

功率场效应管, MOSFET, N沟道, 2.8 A, 600 V, 2 ohm, 10 V, 4 V

ON SEMICONDUCTOR/FAIRCHILD

双路场效应管, MOSFET, 双N沟道, 9.4 A, 20 V, 14 mohm, 4.5 V, 1 V

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 250 mA, 800 V, 13 ohm, 30 V, 3.75 V

NEXPERIA

晶体管, MOSFET, N沟道, 100 A, 30 V, 0.00065 ohm, 10 V, 1.5 V

INFINEON

晶体管, MOSFET, P沟道, -18.7 A, -60 V, 0.101 ohm, -10 V, -3 V