BROADCOM LIMITED

晶体管, 射频FET, 高线性度, 7 V, 500 mA, 1.5 W, 50 MHz, 6 GHz, SOT-89

NEXPERIA

晶体管, MOSFET, N沟道, 65 A, 30 V, 4.92 mohm, 10 V, 1.7 V

VISHAY

晶体管, MOSFET, P沟道, -35 A, -30 V, 0.0103 ohm, -10 V, -2.5 V

INFINEON

晶体管, MOSFET, P沟道, -50 A, -40 V, 0.0092 ohm, -10 V, -3 V

VISHAY

场效应管, MOSFET, N沟道

VISHAY

晶体管, MOSFET, P沟道, -50 A, -40 V, 6.7 mohm, -10 V, -1 V

MICROCHIP

MOSFET, N CHANNEL, 300V, 0.2A, TO-243AA-3

VISHAY

场效应管, MOSFET, P沟道

ON SEMICONDUCTOR

晶体管, MOSFET, N沟道, 14 A, 25 V, 0.0704 ohm, 10 V, 1.5 V

ROHM

晶体管 双极预偏置/数字, AEC-Q101, 单路PNP, -50 V, -100 mA, 22 kohm, 22 kohm, 1 电阻比率

INFINEON

单晶体管, IGBT, 23 A, 2.52 V, 100 W, 600 V, TO-220AB, 3 引脚

VISHAY

晶体管, MOSFET, P沟道, -19.2 A, -30 V, 0.0127 ohm, -4.5 V, -2.1 V

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 2.9 A, 900 V, 1.56 ohm, 10 V, 3.75 V

ON SEMICONDUCTOR/FAIRCHILD

双极性晶体管, PNP, -80V

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, P沟道, -2.4 A, -20 V, 0.036 ohm, -4.5 V, -800 mV

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 80 A, 100 V, 7.5 mohm, 10 V, 4 V

VISHAY

双路场效应管, MOSFET, 双N沟道, 6.5 A, 60 V, 0.033 ohm, 10 V, 2.4 V

MICRO COMMERCIAL COMPONENTS

双极性晶体管, PNP, -300VDC, TO-92

NXP

双极性晶体管, PNP

INFINEON

晶体管, MOSFET, N沟道, 80 A, 100 V, 0.0072 ohm, 10 V, 2.7 V

ON SEMICONDUCTOR

Bipolar (BJT) Single Transistor, Dual NPN, 45 V, 100 MHz, 380 mW, 100 mA, 150 hFE

ON SEMICONDUCTOR

单晶体管 双极, NPN, 400 V, 10 MHz, 40 W, 1 A, 10 hFE

INFINEON

晶体管, MOSFET, N沟道, 18 A, 30 V, 0.0039 ohm, 10 V, 1.8 V

NEXPERIA

双极晶体管阵列, AEC-Q101, 双NPN, 100 V, 1.25 W, 3 A, 10 hFE, SOT-1205

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 4.4 A, 250 V, 0.9 ohm, 10 V, 5 V