INFINEON

晶体管, MOSFET, N沟道, 25 A, 55 V, 37 mohm, 10 V, 3 V

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 50 A, 60 V, 0.0115 ohm, 10 V, 4 V

NEXPERIA

单晶体管 双极, NPN, 80 V, 180 MHz, 500 mW, 1 A, 63 hFE

ON SEMICONDUCTOR/FAIRCHILD

单晶体管 双极, NPN, 100 V, 3 MHz, 30 W, 1 A, 15 hFE

INFINEON

晶体管, MOSFET, N沟道, 30 A, 30 V, 0.0113 ohm, 10 V, 2.2 V

ON SEMICONDUCTOR

晶体管, MOSFET, N沟道, 9 A, 55 V, 0.09 ohm, 12 V, 1.75 V

INTERNATIONAL RECTIFIER

场效应管, MOSFET, P沟道, -15A, -20V, 8-SOIC

DIODES INC.

双路场效应管, MOSFET, AEC-Q101, N和P, 845 mA, 20 V, 0.3 ohm, 4.5 V, 1 V

NEXPERIA

单晶体管 双极, NPN, 45 V, 180 MHz, 640 mW, 1 A, 63 hFE

LITTELFUSE

单晶体管, IGBT, 20 A, 1.3 V, 125 W, 350 V, TO-252, 3 引脚

VISHAY

场效应管, MOSFET, N沟道, 30V, 4A, TO-236

ON SEMICONDUCTOR

单晶体管 双极, AEC-Q100, NPN, 60 V, 65 W, 5 A, 1000 hFE

VISHAY

晶体管, MOSFET, N沟道, 5 A, 500 V, 1.4 ohm, 10 V, 4.5 V

VISHAY

晶体管, MOSFET, N沟道, 28 A, 100 V, 77 mohm, 5 V, 2 V

TEXAS INSTRUMENTS

双极晶体管阵列, NPN, 100 V, 500 mA, SOIC

ON SEMICONDUCTOR

单晶体管 双极, AEC-Q100, NPN, 100 V, 50 W, 2 A, 500 hFE

INFINEON

晶体管, MOSFET, N沟道, 100 A, 25 V, 0.0009 ohm, 10 V, 1.8 V

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 210 mA, 50 V, 1.17 ohm, 10 V, 1.3 V

VISHAY

晶体管, MOSFET, N沟道, 19.3 A, 30 V, 0.007 ohm, 10 V, 1 V

ON SEMICONDUCTOR/FAIRCHILD

单晶体管 双极, PNP, -25 V, 120 MHz, 200 mW, -800 mA, 160 hFE

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 117 A, 150 V, 0.00685 ohm, 10 V, 2 V

ON SEMICONDUCTOR/FAIRCHILD

单晶体管 双极, PNP, -80 V, 1.25 W, -1.5 A, 100 hFE

INFINEON

晶体管, MOSFET, N沟道, 1.8 A, 100 V, 0.153 ohm, 10 V, 1.4 V

NEXPERIA

单晶体管 双极, PNP, 80 V, 145 MHz, 650 mW, 1 A, 63 hFE

STMICROELECTRONICS

晶体管, MOSFET, N沟道, 9 A, 400 V, 550 mohm, 10 V, 3.75 V