INFINEON

晶体管, MOSFET, N沟道, 120 A, 60 V, 0.0023 ohm, 10 V, 3 V

VISHAY

晶体管, MOSFET, N沟道, 2.6 A, 400 V, 1.8 ohm, 10 V, 4 V

STMICROELECTRONICS

单晶体管 双极, NPN, 80 V, 1.25 W, 1.5 A, 40 hFE

ON SEMICONDUCTOR/FAIRCHILD

功率场效应管, MOSFET, N沟道, 8 A, 800 V, 1.29 ohm, 10 V, 5 V

RENESAS

晶体管, MOSFET, N沟道, 3.1 A, 60 V, 0.082 ohm, 10 V

ON SEMICONDUCTOR/FAIRCHILD

双路场效应管, MOSFET, 双P沟道, 700 mA, -12 V, 0.221 ohm, -4.5 V, -600 mV

ON SEMICONDUCTOR

双极性晶体管, NPN, 60V TO-204

ON SEMICONDUCTOR

双极晶体管

ON SEMICONDUCTOR

单晶体管 双极, PNP, -100 V, 3 MHz, 30 W, -1 A, 15 hFE

INTERNATIONAL RECTIFIER

场效应管, N 通道, MOSFET, 55V, 3.8A SOT-223

ON SEMICONDUCTOR

双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, 1000 hFE, DIP

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 20 A, 60 V, 0.048 ohm, 10 V, 4 V

NEXPERIA

晶体管, MOSFET, N沟道, 30 A, 100 V, 0.0245 ohm, 10 V, 3 V

DIODES INC.

单晶体管 双极, NPN, 100 V, 130 MHz, 3 W, 6 A, 200 hFE

ON SEMICONDUCTOR

晶体管, JFET, JFET, 25 V, 24 mA, 60 mA, 6 V, SOT-23, JFET

ON SEMICONDUCTOR

双路场效应管, MOSFET, 双N沟道, 13.5 A, 30 V, 0.0052 ohm, 10 V, 2.2 V

VISHAY

晶体管, MOSFET, P沟道, -18.6 A, -20 V, 0.006 ohm, -10 V, -600 mV

STMICROELECTRONICS

单晶体管 双极, PNP, -80 V, 20 W, -8 A, 40 hFE

NEXPERIA

晶体管, MOSFET, N沟道, 25 A, 200 V, 0.12 ohm, 10 V, 3 V

DIODES INC.

单晶体管 双极, 达林顿, NPN, 80 V, 150 MHz, 1 W, 1 A, 5000 hFE

INFINEON

晶体管, MOSFET, N沟道, 17 A, 55 V, 0.075 ohm, 10 V, 4 V

STMICROELECTRONICS

晶体管, 射频FET, 40 V, 2 A, 6 W, 1 GHz, SOT-89

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 2.9 A, 900 V, 1.56 ohm, 10 V, 3.75 V

ON SEMICONDUCTOR

单晶体管 双极, 达林顿, PNP, 45 V, 200 MHz, 40 W, 4 A, 750 hFE

ON SEMICONDUCTOR/FAIRCHILD

晶体管, P沟道