RENESAS

晶体管, MOSFET, N沟道, 40 A, 60 V, 4.5 mohm, 10 V

ON SEMICONDUCTOR/FAIRCHILD

单晶体管 双极, 达林顿, NPN, 100 V, 80 W, 10 A, 500 hFE

ROHM

双极晶体管阵列, AEC-Q101, 双NPN, 50 V, 150 mW, 150 mA, 120 hFE, SC-88

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 19.4 A, 200 V, 120 mohm, 10 V, 5 V

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 50 A, 60 V, 22 mohm, 10 V, 4 V

INFINEON

功率场效应管, MOSFET, N沟道, 21 A, 650 V, 0.15 ohm, 10 V, 3 V

MICROCHIP

晶体管, MOSFET, N沟道, 30 mA, 500 V, 850 ohm, 0 V

VISHAY

晶体管, MOSFET, N沟道, 14.5 A, 500 V, 0.243 ohm, 10 V, 4 V

VISHAY

晶体管, MOSFET, P沟道, -19.7 A, -30 V, 8.1 mohm, -10 V, -1.2 V

ON SEMICONDUCTOR/FAIRCHILD

MOSFET, N CHANNEL, 250V, 0.077OHM, 33A, TO-263-3

TEXAS INSTRUMENTS

晶体管, MOSFET, N沟道, 60 A, 30 V, 5.1 mohm, 10 V, 1.5 V

INFINEON

晶体管, MOSFET, N沟道, 64 A, 250 V, 0.0175 ohm, 10 V, 3 V

INTERNATIONAL RECTIFIER

双路场效应管, N/P通道, MOSFET, 30V, SOIC

VISHAY

晶体管, MOSFET, P沟道, -140 mA, -20 V, 8 ohm, -4.5 V, 900 mV

ADVANCED POWER ELECTRONICS CORP

双路场效应管, MOSFET, 双N沟道, 6 A, 20 V, 0.018 ohm, 4.5 V, 300 mV

INFINEON

场效应管, MOSFET

VISHAY

场效应管, MOSFET, N沟道, 10A, 30V, 2.5W

INFINEON

晶体管, MOSFET, P沟道, -9.7 A, -60 V, 0.2 ohm, -10 V, -1.5 V

ON SEMICONDUCTOR/FAIRCHILD

射频双极晶体管

DIODES INC.

晶体管, MOSFET, P沟道, -950 mA, -20 V, 150 mohm, -4.5 V, -1 V

ON SEMICONDUCTOR/FAIRCHILD

单晶体管 双极, 达林顿, PNP, -30 V, 125 MHz, 350 mW, -1.2 A, 10000 hFE

MULTICOMP

单晶体管 双极, NPN, 60 V, 1 W, 3 A, 30 hFE

DIODES INC.

单晶体管 双极, NPN, 160 V, 300 mW, 600 mA, 80 hFE

NEXPERIA

晶体管 双极预偏置/数字, BRT, 单路NPN, 50 V, 500 mA, 2.2 kohm, 10 kohm

ON SEMICONDUCTOR

单晶体管 双极, PNP, -50 V, 400 MHz, 3.5 W, -4 A, 200 hFE