VISHAY

场效应管, MOSFET, N沟道

NEXPERIA

双路场效应管, MOSFET, 双P沟道, -500 mA, -20 V, 1.02 ohm, -4.5 V, -700 mV

VISHAY

场效应管, MOSFET, N沟道, 500V, 10.5A, TO-220FP-3

ON SEMICONDUCTOR/FAIRCHILD

MOSFET, N CHANNEL, 30V, 0.0024OHM, 42A, POWER 56-8

ON SEMICONDUCTOR

晶体管, MOSFET, N沟道, 50 A, 60 V, 0.008 ohm, 10 V, 2 V

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 4.3 A, 1 kV, 1.85 ohm, 10 V, 3.75 V

ON SEMICONDUCTOR/FAIRCHILD

场效应管, MOSFET, N沟道, 60V, 115mA, SOT-363

INFINEON

晶体管, MOSFET, P沟道, -6.9 A, -20 V, 0.026 ohm, -4.5 V, -400 mV

INTERNATIONAL RECTIFIER

场效应管, P通道, MOSFET, -100V, 14A, TO-220AB

STMICROELECTRONICS

单晶体管 双极, 通用, PNP, 30 V, 100 MHz, 1.6 W, -3 A, 200 hFE

INFINEON

晶体管, MOSFET, N沟道, 180 A, 80 V, 0.0011 ohm, 10 V, 3 V

ON SEMICONDUCTOR

晶体管, MOSFET, N沟道, 12 A, 60 V, 0.089 ohm, 5 V, 1.6 V

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 11 A, 40 V, 0.01 ohm, 4.5 V, 1.2 V

NXP

晶体管, 射频FET, 40 V, 2 A, 31.25 W, 450 MHz, 520 MHz, PLD-1.5

ON SEMICONDUCTOR/FAIRCHILD

晶体管, JFET, JFET, -25 V, 4 mA, 10 mA, -4 V, SOT-23, RF JFET

TEXAS INSTRUMENTS

双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, DIP

INFINEON

晶体管, MOSFET, N沟道, 429 A, 24 V, 800 μohm, 10 V, 2 V

MULTICOMP

单晶体管 双极, 达林顿, NPN, 80 V, 80 W, 12 A, 1000 hFE

INFINEON

晶体管, MOSFET, P沟道, 13 A, -100 V, 205 mohm, -10 V, -4 V

INFINEON

晶体管, MOSFET, N沟道, 7 A, 200 V, 0.194 ohm, 10 V, 3 V

INFINEON

功率场效应管, MOSFET, N沟道, 22.4 A, 650 V, 0.135 ohm, 10 V, 4 V

INFINEON

晶体管, MOSFET, P沟道, 40 A, -100 V, 60 mohm, -10 V, -4 V

VISHAY

晶体管, MOSFET, N沟道, 4.8 A, 200 V, 800 mohm, 10 V, 4 V

NEXPERIA

晶体管 双极预偏置/数字, AEC-Q101, 双路 NPN, 50 V, 100 mA, 4.7 kohm, 47 kohm, 0.1 电阻比率

ON SEMICONDUCTOR

单晶体管 双极, NPN, 100 V, 50 W, 2 A, 500 hFE