VISHAY

晶体管, MOSFET, N沟道, 10.5 A, 500 V, 0.33 ohm, 10 V, 4 V

INFINEON

晶体管, MOSFET, N沟道, 660 mA, 200 V, 1 ohm, 10 V, -1.4 V

INFINEON

晶体管, MOSFET, N沟道, 17 A, 25 V, 0.0038 ohm, 20 V, 1.9 V

NEXPERIA

单晶体管 双极, NPN, 40 V, 1.35 W, 2 A, 900 hFE

DIODES INC.

双极晶体管阵列, 双路补偿高增益, NPN, PNP, 40 V, 2.75 W, 2 A, 500 hFE, SOT-223

STMICROELECTRONICS

单晶体管 双极, 达林顿, PNP, 100 V, 70 W, 10 A, 750 hFE

TEXAS INSTRUMENTS

晶体管, MOSFET, P沟道, -2.5 A, -20 V, 0.075 ohm, -8 V, -950 mV

INFINEON

功率场效应管, MOSFET, N沟道, 11 A, 650 V, 0.199 ohm, 10 V, 3.5 V

INFINEON

晶体管, MOSFET, N沟道, 7 A, 200 V, 0.3 ohm, 10 V, 3 V

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, P沟道, 6 A, -12 V, 26 mohm, -4.5 V, -500 mV

NEXPERIA

双路场效应管, MOSFET, 双N沟道, 600 mA, 20 V, 0.47 ohm, 4.5 V, 700 mV

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 3.6 A, 900 V, 1.1 ohm, 10 V, 3.75 V

ON SEMICONDUCTOR/FAIRCHILD

单晶体管 双极, PNP, -80 V, 50 MHz, 12.5 W, -3 A, 12 hFE

STMICROELECTRONICS

单晶体管 双极, 达林顿, PNP, -100 V, 80 W, 8 A, 200 hFE

ON SEMICONDUCTOR

Power MOSFET, N Channel, 2 A, 1.5 kV, 10 ohm, 10 V

DIODES INC.

单晶体管 双极, NPN, 180 V, 70 MHz, 2 W, 500 mA, 500 hFE

VISHAY

场效应管, MOSFET, P沟道, TO-220AB

INFINEON

晶体管, MOSFET, 汽车, N沟道, 36 A, 100 V, 26.5 mohm, 10 V, 4 V

VISHAY

晶体管, MOSFET, N沟道, 6 A, 20 V, 26500 μohm, 4.5 V, 450 mV

NEXPERIA

单晶体管 双极, PNP, -80 V, 145 MHz, 1.65 W, -1 A, 63 hFE

INFINEON

晶体管, MOSFET, N沟道, 40 A, 30 V, 0.0023 ohm, 10 V, 2 V

INFINEON

双路场效应管, MOSFET, 双N沟道, 4.9 A, 30 V, 50 mohm, 10 V, 1 V

VISHAY

场效应管, MOSFET, N沟道

INFINEON

晶体管, MOSFET, N沟道, 24 A, 150 V, 95 mohm, 10 V, 5 V

ON SEMICONDUCTOR

场效应管, MOSFET, N沟道, 500V 5A TO-220