VISHAY

双路场效应管, MOSFET, 双N沟道, 4.4 A, 20 V, 0.032 ohm, 4.5 V, 1 V

ON SEMICONDUCTOR/FAIRCHILD

双路场效应管, MOSFET, 双N沟道, 1.2 A, 20 V, 0.16 ohm, 4.5 V, 800 mV

INFINEON

晶体管, MOSFET, N沟道, 50 A, 100 V, 0.0125 ohm, 10 V, 1.7 V

NEXPERIA

晶体管 双极预偏置/数字, AEC-Q101, 单路NPN, 50 V, 100 mA, 4.7 kohm, 47 kohm, 0.1 电阻比率

NEXPERIA

晶体管, MOSFET, N沟道, 120 A, 40 V, 0.00195 ohm, 10 V, 3 V

DIODES INC.

晶体管, MOSFET, P沟道, -3.7 A, -60 V, 0.055 ohm, -10 V, -1 V

INFINEON

晶体管, MOSFET, N沟道, 110 A, 100 V, 0.0034 ohm, 10 V, 2.5 V

DIODES INC.

单晶体管 双极, NPN, 400 V, 50 MHz, 1 W, 225 mA, 100 hFE

VISHAY

功率场效应管, MOSFET, N沟道, 12 A, 650 V, 0.33 ohm, 10 V

ON SEMICONDUCTOR/FAIRCHILD

单晶体管, IGBT, 50 A, 2.5 V, 312 W, 1.2 kV, TO-3P, 3 引脚

ON SEMICONDUCTOR/FAIRCHILD

单晶体管 双极, PNP, -100 V, 3 MHz, 30 W, -1 A, 15 hFE

INFINEON

晶体管, MOSFET, N沟道, 43 A, 60 V, 0.0126 ohm, 20 V, 4 V

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 5 A, 650 V, 0.98 ohm, 10 V, 3 V

ON SEMICONDUCTOR

双路场效应管, MOSFET, 双P沟道, -2.5 A, -60 V, 0.105 ohm, -10 V, -2.6 V

ON SEMICONDUCTOR/FAIRCHILD

场效应管, MOSFET, N沟道, 36W, TO-252

VISHAY

功率场效应管, MOSFET, N沟道, 9.2 A, 600 V, 750 mohm, 10 V, 4 V

ON SEMICONDUCTOR

单晶体管 双极, NPN, 250 V, 10 MHz, 15 W, 1 A, 10 hFE

VISHAY

双路场效应管, MOSFET, 双N沟道, 1.13 A, 20 V, 0.22 ohm, 4.5 V, 450 mV

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, P沟道, -4.3 A, -35 V, 0.045 ohm, -10 V, -1.8 V

INFINEON

晶体管, MOSFET, N沟道, 160 A, 40 V, 4 mohm, 10 V, 3 V

INFINEON

功率场效应管, MOSFET, N沟道, 120 mA, 600 V, 25 ohm, 10 V, 1.9 V

ON SEMICONDUCTOR/FAIRCHILD

场效应管, MOSFET, N沟道

ON SEMICONDUCTOR

晶体管, MOSFET, N沟道, 69 A, 30 V, 0.0037 ohm, 10 V, 1.9 V

INFINEON

晶体管, MOSFET, N沟道, 180 A, 100 V, 4.5 mohm, 10 V, 4 V

DIODES INC.

单晶体管 双极, NPN, 60 V, 150 MHz, 500 mW, 1 A, 150 hFE