NEXPERIA

晶体管, MOSFET, N沟道, 87 A, 60 V, 0.00527 ohm, 10 V, 3 V

INFINEON

功率场效应管, MOSFET, N沟道, 6 A, 650 V, 0.594 ohm, 10 V, 4 V

DIODES INC.

单晶体管 双极, PNP, 100 V, 200 MHz, 1.25 W, 2 A, 200 hFE

MULTICOMP

单晶体管 双极, NPN, 300 V, 75 MHz, 1 W, 100 mA, 25 hFE

MULTICOMP

场效应管, MOSFET, 双路N沟道, 60V, 4.4Ω, 115mA, SOT-363-6

INFINEON

晶体管, MOSFET, N沟道, 84 A, 200 V, 0.0103 ohm, 10 V, 3 V

INFINEON

晶体管, MOSFET, N沟道, 180 A, 40 V, 0.0011 ohm, 10 V, 3 V

INTERNATIONAL RECTIFIER

场效应管, MOSFET

NEXPERIA

单晶体管 双极, 通用, PNP, -45 V, 80 MHz, 250 mW, -500 mA, 160 hFE

INFINEON

晶体管, MOSFET, N沟道, 160 A, 40 V, 0.0014 ohm, 10 V, 3 V

INFINEON

双路场效应管, MOSFET, 双N沟道, 5.2 A, 20 V, 0.05 ohm, 4.5 V, 700 mV

INFINEON

晶体管, MOSFET, N沟道, 210 A, 75 V, 3.3 mohm, 10 V, 4 V

INFINEON

晶体管, MOSFET, P沟道, -16 A, -30 V, 5.4 mohm, -10 V, -1.8 V

STMICROELECTRONICS

晶体管, MOSFET, N沟道, 80 A, 55 V, 6.5 mohm, 10 V, 3 V

NEXPERIA

双路场效应管, MOSFET, 双N沟道, 320 mA, 60 V, 0.9 ohm, 10 V, 1.2 V

NEXPERIA

单晶体管 双极, NPN, 250 V, 60 MHz, 1.2 W, 100 mA, 50 hFE

NEXPERIA

晶体管, MOSFET, N沟道, 55 A, 25 V, 0.00755 ohm, 10 V, 1.5 V

BROADCOM LIMITED

晶体管, 射频FET, 5.5 V, 65 mA, 725 mW, 450 MHz, 10 GHz, SOT-343

TEXAS INSTRUMENTS

晶体管, MOSFET, N沟道, 35 A, 60 V, 0.0081 ohm, 10 V, 2 V

INTERNATIONAL RECTIFIER

场效应管, MOSFET, 双N沟道, 2W, 8-SOIC

ON SEMICONDUCTOR/FAIRCHILD

单晶体管 双极, NPN, 50 V, 80 MHz, 400 mW, 150 mA, 120 hFE

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, P沟道, -4.5 A, -20 V, 0.039 ohm, -4.5 V, -1 V

ON SEMICONDUCTOR/FAIRCHILD

场效应管, MOSFET

DIODES INC.

晶体管, MOSFET, 增强模式, P沟道, -1.7 A, -60 V, 0.39 ohm, -10 V, -1 V

INFINEON

双路场效应管, MOSFET, 双路N和P通道, 6.8 A, 30 V, 0.022 ohm, 10 V, 1.8 V