MULTICOMP

单晶体管 双极, NPN, 400 V, 4 MHz, 75 W, 4 A, 10 hFE

INFINEON

晶体管, MOSFET, N沟道, 123 A, 100 V, 0.0042 ohm, 10 V, 3.6 V

VISHAY

功率场效应管, MOSFET, N沟道, 2 A, 600 V, 4.4 ohm, 10 V, 4 V

ON SEMICONDUCTOR/FAIRCHILD

晶体管, JFET, JFET, 30 V, -2 mA, -15 mA, 2 V, SOT-23, JFET

VISHAY

场效应管, MOSFET, N沟道

NEXPERIA

晶体管, MOSFET, N沟道, 48.2 A, 75 V, 0.0147 ohm, 10 V, 1.65 V

ON SEMICONDUCTOR/FAIRCHILD

场效应管, MOSFET, N沟道, UNIFET系列, 600V, 6.5A, TO-220F

VISHAY

场效应管, MOSFET, N沟道

STMICROELECTRONICS

晶体管, MOSFET, N沟道, 15 A, 60 V, 20 mohm, 10 V, 4 V

INFINEON

场效应管, MOSFET

NEXPERIA

单晶体管 双极, 双NPN, 30 V, 165 MHz, 2 W, 1 A, 180 hFE

INTERNATIONAL RECTIFIER

场效应管, N 通道, MOSFET, 200V, 18A, D2-PAK

MICROCHIP

晶体管, MOSFET, N沟道, 500 mA, 400 V, 17 ohm, 0 V

ON SEMICONDUCTOR/FAIRCHILD

功率场效应管, MOSFET, N沟道, 8 A, 900 V, 1.12 ohm, 10 V, 5 V

NEXPERIA

晶体管, MOSFET, N沟道, 100 A, 30 V, 0.00096 ohm, 10 V, 1.7 V

INFINEON

晶体管, MOSFET, N沟道, 17 A, 100 V, 105 mohm, 10 V, 2 V

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 7 A, 650 V, 0.6 ohm, 10 V, 3 V

ROHM

晶体管 双极预偏置/数字, AEC-Q101, 单路NPN, 50 V, 100 mA, 47 kohm, 47 kohm, 1 电阻比率

VISHAY

双路场效应管, MOSFET, 双N沟道, 1.3 A, 20 V, 0.165 ohm, 4.5 V, 400 mV

ON SEMICONDUCTOR

单晶体管 双极, PNP, -150 V, 300 MHz, 225 mW, -500 mA, 50 hFE

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 35 A, 650 V, 0.067 ohm, 10 V, 4 V

NEXPERIA

晶体管, MOSFET, N沟道, 35.3 A, 40 V, 0.02 ohm, 10 V, 3 V

ON SEMICONDUCTOR/FAIRCHILD

场效应管, MOSFET, N沟道, 250V, 14A

INFINEON

晶体管, MOSFET, N沟道, 30 A, 200 V, 75 mohm, 10 V, 4 V

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 15.7 A, 60 V, 0.042 ohm, 10 V, 1 V