INFINEON

功率场效应管, MOSFET, N沟道, 60 A, 650 V, 0.04 ohm, 10 V, 3 V

NEXPERIA

晶体管 双极预偏置/数字, BRT, 单路NPN, 50 V, 100 mA, 22 kohm, 22 kohm

NEXPERIA

晶体管, MOSFET, N沟道, 2.7 A, 40 V, 0.064 ohm, 10 V, 1.6 V

ROHM

双极晶体管阵列, 双路, NPN, 50 V, 150 mW, 150 mA, 120 hFE, SOT-363

VISHAY

晶体管, MOSFET, N沟道, 5.4 A, 400 V, 550 mohm, 10 V, 4 V

DIODES INC.

晶体管, MOSFET, N沟道, 150 mA, 60 V, 5 ohm, 10 V, 2.5 V

INFINEON

晶体管, MOSFET, N沟道, 180 A, 80 V, 0.0018 ohm, 10 V, 3 V

INTERNATIONAL RECTIFIER

ON SEMICONDUCTOR

单晶体管 双极, NPN, 80 V, 3 MHz, 65 W, 6 A, 15 hFE

MULTICOMP

单晶体管 双极, NPN, 40 V, 400 MHz, 1 W, 1.5 A, 60 hFE

NEXPERIA

晶体管, MOSFET, N沟道, 70 A, 25 V, 0.00245 ohm, 10 V, 1.74 V

TEXAS INSTRUMENTS

双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, DIP

ON SEMICONDUCTOR/FAIRCHILD

双路场效应管, MOSFET, 双P沟道, -2.1 A, -80 V, 0.148 ohm, -10 V, -1.8 V

VISHAY

晶体管, MOSFET, P沟道, 11 A, -40 V, 0.0075 ohm, -10 V, -3 V

NEXPERIA

单晶体管 双极, PNP, -80 V, 145 MHz, 500 mW, -1 A, 100 hFE

INFINEON

晶体管, MOSFET, N沟道, 40 A, 30 V, 13.8 mohm, 10 V, 1.8 V

INFINEON

场效应管, MOSFET

VISHAY

晶体管, MOSFET, N沟道, 14.5 A, 500 V, 0.243 ohm, 10 V, 4 V

VISHAY

场效应管, MOSFET, N沟道, D2-PAK

INTERNATIONAL RECTIFIER

场效应管, N 通道, MOSFET, 200V, 94A, TO-247AC

INFINEON

功率场效应管, MOSFET, N沟道, 2.6 A, 600 V, 3.06 ohm, 10 V, 3 V

VISHAY

晶体管, P沟道

VISHAY

晶体管, MOSFET, P沟道, -8 A, -20 V, 0.02 ohm, -4.5 V, -1.5 V

NEXPERIA

单晶体管 双极, PNP, 40 V, 250 mW, 1 A, 300 hFE

ON SEMICONDUCTOR

单晶体管 双极, NPN, 100 V, 75 W, 8 A, 100 hFE