TOSHIBA

晶体管, MOSFET, N沟道, 100 mA, 20 V, 3 ohm, 4 V, 1.1 V

VISHAY

晶体管, MOSFET, P沟道, -3 A, -12 V, 0.04 ohm, -4.5 V, -900 mV

ON SEMICONDUCTOR

双极性晶体管, NPN, 80V SOT-23

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 6.3 A, 30 V, 0.021 ohm, 10 V, 1.9 V

MULTICOMP

单晶体管 双极, NPN, 80 V, 400 MHz, 500 mW, 1 A, 300 hFE

ON SEMICONDUCTOR/FAIRCHILD

单晶体管 双极, NPN, 45 V, 300 MHz, 500 mW, 100 mA, 110 hFE

ON SEMICONDUCTOR

单晶体管 双极, NPN, 45 V, 225 mW, 500 mA, 40 hFE

NEXPERIA

单晶体管 双极, AEC-Q101, PNP, -60 V, 100 MHz, 250 mW, -100 mA, 220 hFE

INFINEON

晶体管, MOSFET, N沟道, 41 A, 55 V, 22 mohm, 10 V, 2 V

ON SEMICONDUCTOR

晶体管, MOSFET, N沟道, 12 A, 60 V, 0.089 ohm, 5 V, 1.6 V

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, P沟道, 8 A, -20 V, 24 mohm, -4.5 V, -700 mV

NEXPERIA

晶体管, MOSFET, P沟道, -410 mA, -30 V, 1.2 ohm, -4.5 V, -700 mV

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, P沟道, 1.6 A, -20 V, 130 mohm, -4.5 V, -800 mV

INFINEON

晶体管 双极-射频, NPN, 4 V, 47 GHz, 160 mW, 40 mA, 160 hFE

INFINEON

晶体管, MOSFET, P沟道, -2.3 A, -30 V, 0.135 ohm, -10 V, -1.3 V

ON SEMICONDUCTOR

双极晶体管阵列, AEC-Q101, NPN, PNP, 45 V, 500 mW, 100 mA, 200 hFE, SOT-563

MULTICOMP

单晶体管 双极, NPN, 45 V, 100 MHz, 625 mW, 500 mA, 400 hFE

ON SEMICONDUCTOR

单晶体管 双极, NPN, 45 V, 100 MHz, 225 mW, 100 mA, 420 hFE

ON SEMICONDUCTOR

双极性晶体管, NPN, 双路, 40V, SOT3

ON SEMICONDUCTOR

晶体管 双极预偏置/数字, 单路NPN, 50 V, 100 mA, 4.7 kohm

ON SEMICONDUCTOR

单晶体管 双极, PNP, -45 V, 100 MHz, 225 mW, -500 mA, 160 hFE

ON SEMICONDUCTOR/FAIRCHILD

双路场效应管, MOSFET, 双N沟道, 30 A, 30 V, 0.0058 ohm, 10 V, 2 V

ON SEMICONDUCTOR/FAIRCHILD

单晶体管 双极, NPN, 30 V, 50 MHz, 350 mW, 100 mA, 300 hFE

ON SEMICONDUCTOR/FAIRCHILD

单晶体管 双极, NPN, 45 V, 125 MHz, 350 mW, 200 mA, 250 hFE

ON SEMICONDUCTOR

晶体管 双极预偏置/数字, 单路NPN, 50 V, 100 mA, 10 kohm, 47 kohm, 0.21 电阻比率