VISHAY

晶体管, MOSFET, N沟道, 4.3 A, 100 V, 0.54 ohm, 10 V, 4 V

ON SEMICONDUCTOR

晶体管, MOSFET, N沟道, 102 A, 30 V, 0.0029 ohm, 10 V, 2.2 V

INFINEON

晶体管, MOSFET, P沟道, -80 A, -30 V, 0.0037 ohm, -10 V, -1.5 V

INTERNATIONAL RECTIFIER

场效应管, N 通道, MOSFET, 200V, 30A, TO-247AC

INTERNATIONAL RECTIFIER

场效应管, N 通道, MOSFET, 150V, 43A, TO-247AC

ON SEMICONDUCTOR

单晶体管 双极, 通用, NPN, 300 V, 20 W, 500 mA, 240 hFE

ON SEMICONDUCTOR

单晶体管 双极, NPN, 300 V, 10 MHz, 40 W, 1 A, 10 hFE

DIODES INC.

单晶体管 双极, NPN, 65 V, 300 MHz, 300 mW, 100 mA, 180 hFE

ON SEMICONDUCTOR/FAIRCHILD

单晶体管 双极, PNP, -300 V, 20 W, -500 mA, 30 hFE

NEXPERIA

单晶体管 双极, NPN, 20 V, 140 MHz, 600 mW, 5.3 A, 570 hFE

ON SEMICONDUCTOR

单晶体管 双极, 通用, NPN, 40 V, 250 MHz, 225 mW, 600 mA, 250 hFE

NEXPERIA

晶体管, MOSFET, N沟道, 600 mA, 20 V, 0.47 ohm, 4.5 V, 700 mV

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 300 mA, 800 V, 13 ohm, 10 V, 3.75 V

ON SEMICONDUCTOR

射频双极晶体管

ROHM

晶体管 双极预偏置/数字, AEC-Q101, 单路NPN, 50 V, 100 mA, 47 kohm, 47 kohm, 1 电阻比率

NEXPERIA

单晶体管 双极, NPN, 80 V, 110 MHz, 600 mW, 4.6 A, 470 hFE

ON SEMICONDUCTOR

Bipolar (BJT) Single Transistor, NPN, 350 V, 20 W, 500 mA, 30 hFE

INFINEON

晶体管, MOSFET, P沟道, -120 A, -40 V, 0.0029 ohm, -10 V, -1.7 V

ON SEMICONDUCTOR

单晶体管 双极, NPN, 80 V, 40 W, 4 A, 100 hFE

TOSHIBA

功率场效应管, MOSFET, N沟道, 9 A, 900 V, 1.3 ohm, 10 V, 4 V

ON SEMICONDUCTOR/FAIRCHILD

单晶体管 双极, PNP, -80 V, 3 MHz, 25 W, -2 A, 25 hFE

VISHAY

晶体管, MOSFET, N沟道, 128 A, 150 V, 0.0075 ohm, 10 V, 5 V

ON SEMICONDUCTOR

单晶体管 双极, PNP, -50 V, 230 MHz, 25 W, -10 A, 150 hFE

NEXPERIA

单晶体管 双极, NPN, 60 V, 180 MHz, 500 mW, 1 A, 63 hFE

VISHAY

晶体管, MOSFET, N沟道, 14 A, 100 V, 160 mohm, 10 V, 4 V