DIODES INC.

双路场效应管, MOSFET, AEC-Q101, 双路N和P通道, 6 A, 30 V, 0.019 ohm, 10 V, 2 V

STMICROELECTRONICS

单晶体管 双极, PNP, 45 V, 1.25 W, 1 A, 40 hFE

VISHAY

晶体管, MOSFET, P沟道, -9 A, -30 V, 0.026 ohm, -10 V, -2.5 V

DIODES INC.

晶体管, MOSFET, N沟道, 150 mA, 60 V, 5 ohm, 10 V, 2.4 V

VISHAY

晶体管, MOSFET, P沟道, -6.5 A, -200 V, 0.8 ohm, -10 V, -4 V

NEXPERIA

晶体管 双极预偏置/数字, BRT, 单路NPN, 50 V, 100 mA, 2.2 kohm, 10 kohm, 0.22 电阻比率

MULTICOMP

单晶体管 双极, 通用, NPN, 150 V, 30 MHz, 50 W, 8 A, 40 hFE

INFINEON

晶体管, MOSFET, P沟道, -2.9 A, -60 V, 0.11 ohm, -10 V, -3 V

INFINEON

晶体管, MOSFET, N沟道, 131 A, 55 V, 0.0046 ohm, 10 V, 4 V

ON SEMICONDUCTOR/FAIRCHILD

单晶体管 双极, NPN, 60 V, 2 MHz, 1.75 W, 10 A, 5 hFE

INFINEON

晶体管, MOSFET, N沟道, 350 mA, 240 V, 4.2 ohm, 10 V, 1.4 V

INTERNATIONAL RECTIFIER

NEXPERIA

单晶体管 双极, NPN, 40 V, 250 mW, 1 A, 300 hFE

ON SEMICONDUCTOR

晶体管, MOSFET, N沟道, 12 A, 60 V, 0.084 ohm, 10 V, 2.9 V

ON SEMICONDUCTOR

单晶体管 双极, PNP, -45 V, 100 MHz, 150 mW, -100 mA, 150 hFE

ON SEMICONDUCTOR

单晶体管 双极, 达林顿, NPN, 100 V, 4 MHz, 85 W, 15 A, 1000 hFE

INFINEON

晶体管, MOSFET, N沟道, 50 A, 60 V, 6.7 mohm, 10 V, 1.7 V

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 4.9 A, 150 V, 0.04 ohm, 10 V, 4 V

VISHAY

场效应管, MOSFET, N沟道

VISHAY

晶体管, MOSFET, P沟道, -5.9 A, -20 V, 0.0265 ohm, -4.5 V, -1 V

INFINEON

晶体管, MOSFET, N沟道, 88 A, 200 V, 0.0099 ohm, 10 V, 3 V

INFINEON

晶体管, MOSFET, N沟道, 5.5 A, 30 V, 45 mohm, 10 V, 2.4 V

ON SEMICONDUCTOR

双极晶体管阵列, AEC-Q100, NPN, 100 V, 65 W, 6 A, 15 hFE, TO-263

VISHAY

场效应管, MOSFET, N沟道, 60V, 8A, SOIC

INFINEON

晶体管, MOSFET, N沟道, 56 A, 55 V, 16 mohm, 10 V, 4 V