VISHAY

晶体管, MOSFET, N沟道, 9.2 A, 100 V, 270 mohm, 5 V, 2 V

INFINEON

晶体管, MOSFET, N沟道, 190 A, 100 V, 0.0032 ohm, 10 V, 2.5 V

ON SEMICONDUCTOR/FAIRCHILD

晶体管, JFET, JFET, 30 V, -2 mA, -25 mA, 4 V, SOT-23, JFET

INFINEON

晶体管, MOSFET, N沟道, 195 A, 40 V, 0.0014 ohm, 10 V, 2.5 V

ON SEMICONDUCTOR

单晶体管 双极, PNP, -60 VDC, 75 W, -8 A, 1000 hFE

NEXPERIA

晶体管, MOSFET, N沟道, 100 A, 40 V, 0.0033 ohm, 10 V, 3 V

INTERNATIONAL RECTIFIER

场效应管, MOSFET

INTERNATIONAL RECTIFIER

晶体管, 单路, IGBT, 600V, 70A

NEXPERIA

晶体管 双极预偏置/数字, BRT, 单路NPN, 50 V, 100 mA, 22 kohm, 22 kohm, 1 电阻比率

NXP

射频场效应管, JFET, N沟道, 20V, 25mA, 3-SOT-23

INFINEON

功率场效应管, MOSFET, N沟道, 10.6 A, 600 V, 0.34 ohm, 10 V, 3 V

VISHAY

晶体管, MOSFET, N沟道, 3.1 A, 500 V, 1.5 ohm, 10 V, 4 V

ON SEMICONDUCTOR/FAIRCHILD

单晶体管 双极, 双PNP, -80 V, 65 W, -5 A, 1000 hFE

NEXPERIA

双极性晶体管, MED POWER, NPN, 80V, 1A

INFINEON

晶体管, MOSFET, N沟道, 14 A, 55 V, 70 mohm, 10 V, 4 V

MULTICOMP

单晶体管 双极, PNP, -120 V, 30 MHz, 1 W, -1 A, 40 hFE

STMICROELECTRONICS

晶体管, MOSFET, N沟道, 40 A, 30 V, 4.6 mohm, 10 V, 2.5 V

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 5 A, 30 V, 60 mohm, 10 V, 1.6 V

MULTICOMP

单晶体管 双极, 达林顿, PNP, 80 V, 70 W, -8 A, 15000 hFE

MULTICOMP

单晶体管 双极, 达林顿, PNP, 80 V, 65 W, 10 A, 20000 hFE

INFINEON

晶体管, MOSFET, N沟道, 55 A, 100 V, 0.0126 ohm, 10 V, 4 V

DIODES INC.

晶体管, MOSFET, 增强模式, N沟道, 2 A, 60 V, 0.15 ohm, 5 V, 1 V

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 79 A, 150 V, 0.014 ohm, 10 V, 4 V

VISHAY

场效应管, MOSFET, N沟道, 50W, TO-220AB

VISHAY

MOSFET, N CHANNEL, 250V, 3.8A, TO-252-3