INFINEON

晶体管, MOSFET, N沟道, 110 A, 60 V, 0.0042 ohm, 10 V, 3.7 V

INFINEON

单晶体管, IGBT, 34 A, 1.6 V, 100 W, 600 V, TO-220AB, 3 引脚

NEXPERIA

双极晶体管阵列, AEC-Q101, 双PNP, -100 V, 1.25 W, -3 A, 10 hFE, SOT-1205

INFINEON

射频晶体管, NPN, 4.5V, 100MA, SOT-343

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 35 A, 25 V, 0.0065 ohm, 10 V, 1.8 V

INFINEON

晶体管, MOSFET, P沟道, -13 A, -150 V, 0.29 ohm, -10 V, -4 V

VISHAY

场效应管, N通道, MOSFET, 250V, 14A SMD-220

VISHAY

晶体管, MOSFET, N沟道, 30 A, 60 V, 28 mohm, 5 V, 2 V

VISHAY

场效应管, MOSFET, N沟道, 600V, 33A, TO-247AD-3

INFINEON

功率场效应管, MOSFET, N沟道, 17 A, 800 V, 0.25 ohm, 10 V, 3 V

ON SEMICONDUCTOR

晶体管, MOSFET, P沟道, -70 A, -60 V, 0.01 ohm, -10 V, -2.6 V

TEXAS INSTRUMENTS

晶体管, MOSFET, N沟道, 27 A, 40 V, 0.0019 ohm, 10 V, 1.8 V

ON SEMICONDUCTOR/FAIRCHILD

功率场效应管, MOSFET, N沟道, 8 A, 800 V, 0.71 ohm, 10 V, 4.5 V

ON SEMICONDUCTOR/FAIRCHILD

双路场效应管, MOSFET, 双P沟道, -410 mA, -25 V, 0.85 ohm, -4.5 V, -820 mV

INFINEON

晶体管, MOSFET, AEC-Q101, N沟道, 35 A, 100 V, 0.02 ohm, 10 V, 1.7 V

NEXPERIA

晶体管 双极预偏置/数字, BRT, 单路NPN, 50 V, 100 mA, 4.7 kohm, 47 kohm

VISHAY

晶体管, MOSFET, N沟道, 19 A, 500 V, 0.16 ohm, 10 V, 4 V

VISHAY

场效应管, MOSFET, N沟道, 60V, 240mA, TO-236

INFINEON

晶体管, MOSFET, N沟道, 70 A, 100 V, 0.0094 ohm, 10 V, 3 V

INFINEON

晶体管, MOSFET, N沟道, 62 A, 200 V, 0.022 ohm, 10 V, 5 V

VISHAY

晶体管, MOSFET, P沟道, -50 A, -30 V, 4.2 mohm, -10 V, -1.2 V

INTERNATIONAL RECTIFIER

场效应管, P通道, MOSFET, -55V, 31A, TO-220AB

INFINEON

晶体管, MOSFET, N沟道, 8.7 A, 20 V, 22 mohm, 4.5 V, 700 mV

STMICROELECTRONICS

晶体管, MOSFET, N沟道, 50 A, 100 V, 0.025 ohm, 10 V, 3 V

TEXAS INSTRUMENTS

双路场效应管, MOSFET, 双N沟道, 14 A, 30 V, 0.0066 ohm, 10 V, 1.8 V