STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 3.5 A, 1 kV, 3.7 ohm, 10 V, 3.75 V

INFINEON

晶体管, MOSFET, N沟道, 8.7 A, 100 V, 190 mohm, 10 V, 4 V

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 8.3 A, 1 kV, 1.38 ohm, 10 V, 3.75 V

DIODES INC.

晶体管, MOSFET, N沟道, 260 mA, 240 V, 6 ohm, 10 V, 1.3 V

ON SEMICONDUCTOR

Bipolar (BJT) Single Transistor, NPN, 50 V, 330 MHz, 25 W, 10 A, 200 hFE

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 27 A, 150 V, 0.036 ohm, 10 V, 3 V

INFINEON

晶体管, MOSFET, N沟道, 48 A, 60 V, 23 mohm, 10 V, 4 V

NEXPERIA

晶体管, MOSFET, N沟道, 100 A, 30 V, 0.002 ohm, 10 V, 1.7 V

VISHAY

晶体管, MOSFET, N沟道, 4.1 A, 60 V, 0.082 ohm, 10 V, 3 V

INFINEON

晶体管, MOSFET, N沟道, 21 A, 30 V, 3.7 mohm, 10 V, 5.4 V

NEXPERIA

单晶体管 双极, PNP, 100 V, 300 mW, 1 A, 150 hFE

STMICROELECTRONICS

单晶体管 双极, 达林顿, NPN, 60 V, 40 W, 4 A, 750 hFE

INFINEON

晶体管, MOSFET, N沟道, 91 A, 55 V, 0.0058 ohm, 10 V, 4 V

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 60 A, 100 V, 0.0063 ohm, 10 V, 3.1 V

ON SEMICONDUCTOR/FAIRCHILD

功率场效应管, MOSFET, N沟道, 1.35 A, 600 V, 3.6 ohm, 10 V, 4 V

NEXPERIA

晶体管, MOSFET, N沟道, 180 mA, 30 V, 2.7 ohm, 10 V, 1.2 V

VISHAY

场效应管, MOSFET, N沟道

ON SEMICONDUCTOR

晶体管, MOSFET, N沟道, 132 A, 100 V, 0.0038 ohm, 10 V, 4 V

INFINEON

晶体管, MOSFET, N沟道, 3.7 A, 200 V, 0.0625 ohm, 10 V, 4 V

ROHM

晶体管, MOSFET, N沟道, 2 A, 60 V, 165 mohm, 4.5 V, 4.5 V

ON SEMICONDUCTOR/FAIRCHILD

双路场效应管, MOSFET, 双N沟道, 7.5 A, 30 V, 0.011 ohm, 10 V, 1.9 V

NEXPERIA

双极晶体管阵列, NPN, 20 V, 2.3 W, 7.5 A, 300 hFE, SOIC

STMICROELECTRONICS

晶体管, MOSFET, N沟道, 180 A, 100 V, 0.0023 ohm, 10 V, 3.5 V

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 45.6 A, 150 V, 33 mohm, 10 V, 4 V

DIODES INC.

双极晶体管阵列, 双路, PNP, -60 V, 200 mW, -600 mA, 100 hFE, SOT-363