VISHAY

晶体管, MOSFET, N沟道, 19.7 A, 100 V, 0.008 ohm, 10 V, 2 V

INFINEON

晶体管, MOSFET, N沟道, 165 A, 60 V, 0.0019 ohm, 10 V, 2.5 V

NEXPERIA

双极晶体管阵列, NPN, 30 V, 250 mW, 100 mA, 100 hFE, SOT-143B

INFINEON

晶体管, MOSFET, N沟道, 73 A, 100 V, 0.0073 ohm, 10 V, 3 V

ON SEMICONDUCTOR/FAIRCHILD

功率场效应管, MOSFET, N沟道, 12 A, 600 V, 530 mohm, 10 V, 4 V

VISHAY

晶体管, MOSFET, N沟道, 14 A, 500 V, 0.32 ohm, 10 V, 3 V

INFINEON

功率场效应管, MOSFET, N沟道, 11 A, 650 V, 0.34 ohm, 10 V, 3 V

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 5.25 A, 800 V, 650 mohm, 10 V, 3.75 V

VISHAY

场效应管, MOSFET, N沟道

ON SEMICONDUCTOR/FAIRCHILD

功率场效应管, MOSFET, N沟道, 3 A, 800 V, 4 ohm, 10 V, 5 V

VISHAY

场效应管, MOSFET, P沟道, -8V, 13.7A, SOIC

MULTICOMP

单晶体管 双极, 通用, PNP, 45 V, 200 MHz, 600 mW, 200 mA, 120 hFE

NEXPERIA

单晶体管 双极, PNP, -65 V, 100 MHz, 250 mW, -100 mA, 125 hFE

ON SEMICONDUCTOR/FAIRCHILD

场效应管, MOSFET, N沟道, 250V, 44A, D2-PAK

INFINEON

晶体管, MOSFET, N沟道, 12 A, 60 V, 9.4 mohm, 10 V, 4.9 V

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 80 A, 75 V, 4.5 mohm, 10 V, 4 V

TEXAS INSTRUMENTS

晶体管, MOSFET, NexFET™, N沟道, 44 A, 30 V, 0.0082 ohm, 8 V, 1.3 V

INFINEON

晶体管, MOSFET, P沟道, -45 A, -30 V, 0.009 ohm, -10 V, -1.5 V

INFINEON

晶体管, MOSFET, P沟道, -10.5 A, -40 V, 0.015 ohm, -10 V, -3 V

VISHAY

晶体管, MOSFET, N沟道, 1.5 A, 100 V, 540 mohm, 10 V, 4 V

VISHAY

场效应管, MOSFET, N沟道, TO-220AB

INFINEON

晶体管, MOSFET, N沟道, 60 A, 55 V, 11 mohm, 10 V, 1 V

INFINEON

晶体管, MOSFET, N沟道, 33 A, 100 V, 0.044 ohm, 10 V, 4 V

NEXPERIA

晶体管, MOSFET, P沟道, -500 mA, -20 V, 1.02 ohm, -4.5 V, -700 mV

VISHAY

晶体管, MOSFET, N沟道, 10.5 A, 500 V, 0.33 ohm, 10 V, 4 V