ON SEMICONDUCTOR

功率场效应管, MOSFET, N沟道, 4.8 A, 600 V, 1.8 ohm, 10 V, 3.9 V

DIODES INC.

双路场效应管, MOSFET, N和P沟道, 3.7 A, 20 V, 0.027 ohm, 4.5 V, 400 mV

ON SEMICONDUCTOR

晶体管, 射频FET, 15 V, 50 mA, 200 mW, SOT-23

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 600 mA, 20 V, 0.24 ohm, 4.5 V, 1 V

INFINEON

晶体管, MOSFET, N沟道, 75 A, 40 V, 0.0015 ohm, 10 V, 4 V

STMICROELECTRONICS

晶体管, MOSFET, N沟道, 30 A, 55 V, 12 mohm, 10 V, 2 V

STMICROELECTRONICS

晶体管, MOSFET, N沟道, 7 A, 120 V, 160 mohm, 10 V, 3 V

VISHAY

晶体管, N沟道

ON SEMICONDUCTOR/FAIRCHILD

单晶体管, IGBT, 63 A, 1.8 V, 208 W, 600 V, TO-247, 3 引脚

NEXPERIA

晶体管, MOSFET, 沟槽式, N沟道, 265 mA, 60 V, 2.1 ohm, 10 V, 1 V

VISHAY

场效应管, P通道, MOSFET, -40V, 40A

VISHAY

功率场效应管, MOSFET, N沟道, 7 A, 600 V, 0.5 ohm, 10 V, 2 V

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 4.3 A, 60 V, 55 mohm, 10 V, 2.2 V

ON SEMICONDUCTOR/FAIRCHILD

单晶体管 双极, NPN, 100 V, 60 W, 8 A, 750 hFE

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 76 A, 80 V, 0.0026 ohm, 10 V, 3.3 V

ON SEMICONDUCTOR

单晶体管 双极, 音频, PNP, -250 V, 4 MHz, 250 W, -16 A, 60 hFE

INTERNATIONAL RECTIFIER

晶体管, 单路, IGBT, 1.2KV, 30A, TO-247AC

ON SEMICONDUCTOR/FAIRCHILD

单晶体管 双极, NPN, 45 V, 300 MHz, 310 mW, 100 mA, 110 hFE

INFINEON

晶体管, MOSFET, N沟道, 350 mA, 240 V, 4 ohm, 10 V, 1 V

SOLID STATE

单晶体管 双极, 达林顿, NPN, 500 V, 250 W, 50 A, 10 hFE

ON SEMICONDUCTOR/FAIRCHILD

双路场效应管, MOSFET, N和P沟道, 460 mA, 25 V, 0.33 ohm, 4.5 V, 800 mV

INFINEON

晶体管, MOSFET, N沟道, 56 A, 75 V, 0.00734 ohm, 20 V, 4 V

NEXPERIA

晶体管, MOSFET, N沟道, 10.7 A, 55 V, 40 mohm, 5 V, 1.5 V

DIODES INC.

晶体管, MOSFET, N沟道, 540 mA, 20 V, 550 mohm, 4.5 V, 1.6 V

ON SEMICONDUCTOR/FAIRCHILD

功率场效应管, MOSFET, N沟道, 10 A, 600 V, 0.35 ohm, 10 V, 2.5 V