NEXPERIA

双极晶体管阵列, 通用, NPN, 40 V, 200 mW, 100 mA, 120 hFE, SOT-666

TOSHIBA

晶体管, MOSFET, N沟道, 5 A, 60 V, 100 mohm, 10 V, 2.5 V

ADVANCED POWER ELECTRONICS CORP

晶体管, MOSFET, N沟道, 3.5 A, 20 V, 0.075 ohm, 4.5 V, 500 mV

INFINEON

功率场效应管, MOSFET, N沟道, 9 A, 650 V, 0.35 ohm, 10 V, 3 V

ON SEMICONDUCTOR/FAIRCHILD

单晶体管 双极, NPN, 15 V, 1.1 GHz, 400 mW, 50 mA, 97 hFE

VISHAY

功率场效应管, MOSFET, N沟道, 15 A, 600 V, 0.23 ohm, 10 V, 2 V

VISHAY

P CHANNEL MOSFET, -30V, 12.6A, SOIC

INFINEON

场效应管, MOSFET, P沟道, -30V, -50A, TO-252-5

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 55 A, 30 V, 10.5 mohm, 10 V, 1.4 V

INFINEON

晶体管, MOSFET, N沟道, 83 A, 150 V, 0.0091 ohm, 10 V, 3 V

ON SEMICONDUCTOR

单晶体管 双极, NPN, 80 V, 50 MHz, 36 W, 10 A, 40 hFE

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 28 A, 300 V, 108 mohm, 10 V, 5 V

INFINEON

晶体管, MOSFET, N沟道, 84 A, 60 V, 8.5 mohm, 10 V, 4 V

STMICROELECTRONICS

单晶体管 双极, PNP, 60 V, 2 W, 6 A, 75 hFE

INFINEON

场效应管, P通道, MOSFET, -55V, 19A, TO-262

INFINEON

单晶体管, IGBT, 31 A, 1.8 V, 100 W, 600 V, TO-263, 3 引脚

INTERNATIONAL RECTIFIER

场效应管, N 通道, MOSFET, 100V, 23A, TO-220FP

ON SEMICONDUCTOR/FAIRCHILD

单晶体管 双极, 达林顿, NPN, 60 V, 50 W, 2 A, 500 hFE

NEXPERIA

单晶体管 双极, NPN, 30 V, 100 MHz, 200 mW, 100 mA, 420 hFE

NEXPERIA

单晶体管 双极, NPN, 30 V, 100 MHz, 250 mW, 100 mA, 110 hFE

ON SEMICONDUCTOR/FAIRCHILD

场效应管, N沟道

TOSHIBA

晶体管, MOSFET, 功率, N沟道, 15 A, 60 V, 0.0139 ohm, 10 V, 1.3 V

VISHAY

晶体管, MOSFET, N沟道, 40 A, 40 V, 5400 μohm, 10 V, 1.2 V

ON SEMICONDUCTOR

单晶体管 双极, NPN, 50 V, 330 MHz, 15 W, 8 A, 200 hFE

VISHAY

MOSFET, P CHANNEL, -100V, -13.2A, POWERPAK 1212-8