VISHAY

晶体管, MOSFET, N沟道, 10 A, 60 V, 200 mohm, 5 V, 2 V

VISHAY

晶体管, MOSFET, P沟道, -7.1 A, -12 V, 0.0285 ohm, -4.5 V, -400 mV

MULTICOMP

单晶体管 双极, 通用, PNP, -200 V, 4 MHz, 250 W, -16 A, 15 hFE

NEXPERIA

单晶体管 双极, PNP, -40 V, 110 MHz, 1.35 W, -6 A, 50 hFE

VISHAY

晶体管, MOSFET, N沟道, 5.3 A, 500 V, 1.2 ohm, 10 V, 3 V

NEXPERIA

晶体管 双极-射频, PNP, -45 V, 100 MHz, 250 mW, -100 mA, 260 hFE

STMICROELECTRONICS

晶体管, MOSFET, N沟道, 3 A, 500 V, 2.3 ohm, 10 V, 3.75 V

DIODES INC.

单晶体管 双极, PNP, 60 V, 150 MHz, 500 mW, -1 A, 100 hFE

ON SEMICONDUCTOR

单晶体管 双极, PNP, -160 V, 120 MHz, 15 W, -1.5 A, 80 hFE

ON SEMICONDUCTOR/FAIRCHILD

场效应管, MOSFET, N沟道

ON SEMICONDUCTOR/FAIRCHILD

场效应管, MOSFET, N沟道, 40V, 7.6A, SOIC

STMICROELECTRONICS

双极(BJT)达林顿晶体管, NPN, 1.2 kV, 40 W, 100 mA, 200 hFE

INFINEON

晶体管, MOSFET, N沟道, 70 A, 30 V, 3.5 mohm, 10 V, 1 V

ON SEMICONDUCTOR/FAIRCHILD

单晶体管, IGBT, 通用, 70 A, 2.7 V, 290 W, 600 V, TO-247, 3 引脚

INFINEON

晶体管, MOSFET, N沟道, 4 A, 55 V, 75 mohm, 10 V, 4 V

WEEN SEMICONDUCTOR

单晶体管 双极, NPN, 500 V, 32 W, 5 A, 22 hFE

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 32 A, 100 V, 36 mohm, 10 V, 4 V

ON SEMICONDUCTOR/FAIRCHILD

单晶体管 双极, NPN, 300 V, 10 MHz, 2 W, 1 A, 30 hFE

INTERNATIONAL RECTIFIER

场效应管, N 通道, MOSFET, 40V, 190A, TO-220AB

ROHM

晶体管 双极预偏置/数字, BRT, 单路NPN, 50 V, 100 mA, 2.2 kohm, 47 kohm, 0.047 电阻比率

VISHAY

场效应管, MOSFET, N沟道

INFINEON

晶体管, MOSFET, N沟道, 44 A, 200 V, 0.0186 ohm, 20 V, 5 V

VISHAY

晶体管, MOSFET, N沟道, 23 A, 400 V, 200 mohm, 10 V, 4 V

DIODES INC.

单晶体管 双极, NPN, 400 V, 50 MHz, 1 W, 500 mA, 50 hFE

VISHAY

双路场效应管, MOSFET, 双N沟道, 5.8 A, 30 V, 0.0155 ohm, 10 V, 3 V