TOSHIBA

功率场效应管, MOSFET, N沟道, 2.5 A, 900 V, 6.4 ohm, 10 V, 4 V

VISHAY

晶体管, MOSFET, N沟道, 35 A, 40 V, 0.0063 ohm, 10 V, 2.2 V

VISHAY

晶体管, MOSFET, 通用, P沟道, 21 A, -100 V, 200 mohm, -10 V, -4 V

INFINEON

晶体管, MOSFET, N沟道, 180 A, 100 V, 0.0039 ohm, 10 V, 4 V

INFINEON

单晶体管, IGBT, 31 A, 600 V, 139 W, 600 V, TO-220AB, 3 引脚

NEXPERIA

晶体管, MOSFET, N沟道, 3.1 A, 60 V, 0.046 ohm, 10 V, 1.7 V

VISHAY

MOSFET, P CHANNEL, -20V, -8A, TSOP-6

VISHAY

晶体管, MOSFET, P沟道, -8 A, -20 V, 0.023 ohm, -1.8 V, -900 mV

ON SEMICONDUCTOR/FAIRCHILD

单晶体管, IGBT, 35 A, 2.45 V, 298 W, 1.2 kV, TO-263AB, 3 引脚

INFINEON

晶体管, MOSFET, N沟道, 80 A, 40 V, 3.1 mohm, 10 V, 1.2 V

VISHAY

场效应管, MOSFET, N沟道

VISHAY

晶体管, MOSFET, P沟道, 3.6 A, -200 V, 1.5 ohm, -10 V, -4 V

VISHAY

场效应管, MOSFET, N沟道, 60V, 10A

VISHAY

双路场效应管, MOSFET, 双N沟道, 4.5 A, 12 V, 0.023 ohm, 4.5 V, 400 mV

INFINEON

晶体管, MOSFET, N沟道, 100 A, 80 V, 0.0028 ohm, 10 V, 2.8 V

NEXPERIA

晶体管, MOSFET, N沟道, 90 A, 80 V, 0.0075 ohm, 10 V, 3 V

TEXAS INSTRUMENTS

晶体管, MOSFET, N沟道, 100 A, 25 V, 0.00049 ohm, 10 V, 1.5 V

NEXPERIA

晶体管, MOSFET, N沟道, 350 mA, 60 V, 2.2 ohm, 10 V, 1.6 V

NEXPERIA

单晶体管 双极, PNP, 80 V, 145 MHz, 500 mW, 1 A, 63 hFE

MULTICOMP

双极性晶体管, NPN, 100V, 4A

STMICROELECTRONICS

单晶体管, IGBT, 80 A, 1.85 V, 468 W, 1.2 kV, TO-247, 3 引脚

STMICROELECTRONICS

场效应管, MOSFET, N沟道, 60V, 16A, TO-220

STMICROELECTRONICS

单晶体管 双极, NPN, 60 V, 2 W, 1 A, 75 hFE

ON SEMICONDUCTOR

双极性晶体管, PNP -60V TO-220

ON SEMICONDUCTOR/FAIRCHILD

单晶体管 双极, PNP, -30 V, 200 MHz, 625 mW, -1 A, 30000 hFE