
VISHAY
晶体管, MOSFET, N沟道, 78.5 A, 200 V, 0.0127 ohm, 10 V, 3 V

NEXPERIA
晶体管 双极预偏置/数字, BRT, 单路NPN, 50 V, 100 mA, 4.7 kohm, 4.7 kohm

ON SEMICONDUCTOR
单晶体管, IGBT, 100 A, 1.7 V, 349 W, 1.2 kV, TO-247, 3 引脚

ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 19 A, 100 V, 68 mohm, 10 V, 2.2 V

VISHAY
双路场效应管, MOSFET, 双P沟道, -8 A, -20 V, 0.0275 ohm, -4.5 V, -1 V

DIODES INC.
单晶体管 双极, 通用, NPN, 45 V, 100 MHz, 330 mW, 500 mA, 350 hFE

ON SEMICONDUCTOR
单晶体管 双极, 音频, NPN, 80 V, 50 MHz, 70 W, 10 A, 60 hFE

ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 25 A, 250 V, 0.0363 ohm, 10 V, 3.9 V

ON SEMICONDUCTOR/FAIRCHILD
单晶体管, IGBT, 72 A, 2.7 V, 500 W, 1.2 kV, TO-247, 3 引脚

ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, PNP, -25 V, 100 MHz, 310 mW, -800 mA, 170 hFE

ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 100 V, 3 MHz, 40 W, 3 A, 10 hFE

INFINEON
晶体管, MOSFET, N沟道, 3.2 A, 60 V, 0.047 ohm, 10 V, 1.8 V

NEXPERIA
晶体管 双极预偏置/数字, BRT, 单路PNP, 50 V, -100 mA, 2.2 kohm, 47 kohm

NEXPERIA
晶体管 双极预偏置/数字, BRT, NPN和PNP执行, 50 V, 100 mA, 2.2 kohm, 47 kohm

INFINEON
晶体管, MOSFET, N沟道, 52 A, 49 V, 0.0058 ohm, 10 V, 1.6 V