ON SEMICONDUCTOR/FAIRCHILD

单晶体管, IGBT, 150 A, 1.9 V, 750 W, 600 V, Power 247, 3 引脚

NEXPERIA

单晶体管 双极, PNP, -60 V, 145 MHz, 500 mW, -1 A, 63 hFE

ON SEMICONDUCTOR/FAIRCHILD

场效应管, MOSFET, P沟道, -20V, 0.5Ω, -350mA, SC-89-3

NEXPERIA

双极晶体管阵列, NPN, PNP, -50 V, 420 mW, -500 mA, 50 hFE, SOT-457

VISHAY

晶体管, MOSFET, N沟道, 14 A, 500 V, 0.32 ohm, 10 V, 3 V

BROADCOM LIMITED

晶体管, 射频FET, 高线性度, 7 V, 1 A, 2.25 W, 400 MHz, 3.9 GHz, SOT-89

TEXAS INSTRUMENTS

晶体管, MOSFET, N沟道, 100 A, 60 V, 0.005 ohm, 10 V, 1.9 V

INFINEON

晶体管, MOSFET, N沟道, 86 A, 30 V, 6.5 mohm, 10 V, 1.8 V

ON SEMICONDUCTOR/FAIRCHILD

单晶体管 双极, NPN, 300 V, 150 MHz, 7 W, 100 mA, 60 hFE

ON SEMICONDUCTOR/FAIRCHILD

单晶体管 双极, PNP, -80 V, 40 MHz, 60 W, -10 A, 60 hFE

INTERNATIONAL RECTIFIER

场效应管, N 通道, MOSFET, 100V, 55A, TO-220AB

DIODES INC.

单晶体管 双极, 通用, NPN, 60 V, 175 MHz, 1 W, 2 A, 100 hFE

VISHAY

晶体管, MOSFET, N沟道, 20 A, 500 V, 0.2 ohm, 10 V, 4 V

ROHM

单晶体管 双极, PNP, -50 V, 140 MHz, 200 mW, -150 mA, 120 hFE

STMICROELECTRONICS

单晶体管 双极, NPN, 80 V, 1.6 W, 1 A, 25 hFE

ON SEMICONDUCTOR/FAIRCHILD

场效应管, MOSFET, N沟道与P沟道, 20V, 0.18Ω, 700mA, SC-70-6

INFINEON

功率场效应管, MOSFET, N沟道, 23.8 A, 600 V, 0.144 ohm, 10 V, 4 V

INFINEON

功率场效应管, MOSFET, N沟道, 16.8 A, 600 V, 0.207 ohm, 10 V, 4 V

INFINEON

功率场效应管, MOSFET, N沟道, 15 A, 900 V, 0.28 ohm, 10 V, 3 V

INFINEON

晶体管, MOSFET, N沟道, 23 A, 500 V, 0.13 ohm, 10 V, 3 V

INFINEON

晶体管, MOSFET, N沟道, 7.1 A, 500 V, 0.47 ohm, 10 V, 3 V

INFINEON

晶体管, MOSFET, N沟道, 120 A, 60 V, 0.0024 ohm, 10 V, 4 V

INFINEON

晶体管, MOSFET, N沟道, 7.6 A, 560 V, 0.5 ohm, 10 V, 3 V

VISHAY

晶体管, MOSFET, N沟道, 120 A, 60 V, 0.002 ohm, 10 V, 4 V

INFINEON

功率场效应管, MOSFET, N沟道, 21 A, 600 V, 0.15 ohm, 10 V, 3 V